a b s t r a c tA combination of an inelastic thermal spike model suitable for insulators and molecular dynamics simulations is used to study the effects of temperature and electronic energy loss on ion track formation, size and morphology in SrTiO 3 systems with pre-existing disorder. We find temperature dependence of the ion track size. We also find a threshold in the electronic energy loss for a given pre-existing defect concentration, which indicates a threshold in the synergy between the inelastic and elastic energy loss.Ó 2015 Acta Materialia Inc. All rights reserved.Electronic effects are of significant importance in a wide variety of fields where high energy irradiation processes take place, including nuclear applications, the semiconductor industry, material synthesis, modification and characterization [1,2]. The importance of the coupling of electronic and atomic processes in ionic and covalent materials has been emphasized in recent studies [3-15,1], where it has been shown that these effects can have linearly additive [3][4][5][6][7][8] or competing [9-11] impacts on the defect production. A more recent study by Weber et al.[16] reveals a remarkable synergy between the inelastic energy loss and pre-existing damage, showing that the presence of pre-existing disorder in the system enhances the sensitivity of the material to the electronic energy loss effects. Furthermore, we previously showed [17] that the size of nanoscale ion tracks can be controlled by the concentration of pre-existing disorder in pre-damaged SrTiO 3 systems. These results emphasize the importance of the pre-existing damage on the energy dissipation in the system and highlights the need to investigate further the role of the defects and defect excitation in microstructure alterations.In the present paper, we study the effects of two factors on the synergy between electronic and atomic processes, and consequently on ion track formation in pre-damaged SrTiO 3 , namely the effects of temperature and the effects of varying electronic energy loss.We use a combination of an inelastic thermal spike (iTS) model suitable for insulators [18] and molecular dynamics (MD) simulations to model the energy dissipation due to irradiation into the system. The iTS model describes the energy exchange between the electronic and the atomic systems in terms of a set of two coupled heat diffusion equations, one for the electronic (1) and one for the atomic (2) system. The energy transfer from the electronic to the atomic lattice occurs via the electron-phonon interactions. C e @T e @t ¼ 1 r @ @r rK e @T e @r À gðT e À T a Þ þ Aðr; tÞ ð 1Þ C a @T a @t ¼ 1 r @ @r rK a @T a @r þ gðT e À T a Þ ð 2ÞC e and C a are the specific heat coefficients of the electronic and atomic systems respectively, whereas K e and K a are the thermal conductivities of the electronic and the atomic system. The term g is the electron-phonon coupling parameter, and Aðr; tÞ describes the energy deposition from the incident ion to the electrons [19]. The second term on the right side of t...