Abstract:Ag4X0 4 ) 2 · AgN0 3 (X = Si, Ge) was formed upon heating the component binary oxides in the presence of excess AgN0 3 at 360 -400° C. Decomposition of Ag 2 0 was suppressed by applying high oxygen pressure . The new compounds are isostructural, Pi, a = 576.8(1), b = 676.8(1), c = 884.3(1) pm, α = 107.03(1)°, β = 99.87(1)°, γ = 94.16(1)° and a = 589.4(1), b = 684.3(2), c = 885.0(2) pm,a = 106,28(2)°, β = 98.94(2)°, y = 95.83(2)°. The structures have been solved, using 2850 and 3196 independent reflections, wit… Show more
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