Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

Kimizuka, Noboru; Isobe, M.; Nakamura, Masaki

doi:10.1006/jssc.1995.1198

Cited by 248 publications

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“…Since the ionic radius of Ga is between those of Al and Fe, it is doubtful whether Ga can occupy the octahedral site and whether Ga 2 O 3 (ZnO) m adopts an LuFeO 3 (ZnO) m -type structure. Although unit cells for Ga 2 O 3 (ZnO) m different from those of the LuFeO 3 (ZnO) m -type compounds were suggested by X-ray diffraction (Kimizuka et al, 1995), the detailed atomic arrangement in Ga 2 O 3 (ZnO) m remains unknown.…”

Section: Introductionmentioning

confidence: 99%

“…In a study of the phase diagrams of the In 2 O 3 ±M 2 O 3 ± ZnO (M = In, Fe, Ga) systems (Kimizuka et al, , 1995Nakamura et al, 1990Nakamura et al, , 1991Nakamura et al, , 1993, new homologous compounds having the chemical formula M 2 O 3 (ZnO) m (M = In, Fe, Ga; m = integer) have been found. Among them, the structures of M 2 O 3 (ZnO) m (M = In, Fe) have been studied by X-ray diffraction and high-resolution transmission electron microscopy (Hiramatsu et al, 1997;Kimizuka et al, 1993;Li et al, 1997;Li, Bando, Nakamura, Onoda & Kimizuka, 1998;Nakamura et al, 1990;Ohta et al, 1996).…”

Section: Introductionmentioning

confidence: 99%

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Structure analysis of new homologous compounds Ga₂O₃(ZnO) _m (m = integer) by high-resolution analytical transmission electron microscopy

Bando

Nakamura

et al. 1999

Acta Crystallogr Sect B

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The crystal structure of a new homologous compound series, Ga 2 O 3 (ZnO) m (m = integer), is determined by high-resolution lattice imaging and high spatial resolution energy-dispersive X-ray spectroscopy (EDS) analysis in a ®eld-emission analytical transmission electron microscope. This work was carried out mainly on the compound with m = 9 (digallium nonazinc dodecaoxide), which belongs to the orthorhombic system and has lattice constants a o = 0.33, b o = 2.0 and c o = 3.4 nm. From the extinction rules three possible space groups are selected and from them a unique space group is assigned as noncentrosymmetric Cmc2 1 (No. 36) on the basis of structural requirements.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structure analysis of new homologous compounds Ga₂O₃(ZnO) _m (m = integer) by high-resolution analytical transmission electron microscopy

Bando

Nakamura

et al. 1999

Acta Crystallogr Sect B

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“…(ZnO) k , where k is an integer. 17 (With trivalent dopants, such as Fe 3þ , Ga 3þ , these ions enter the InO 2 layer extending them into the third dimension in the phase diagram.) Ideally, as represented by the notional formula, the sheets are periodically spaced, but high resolution microscopy reveals that they can often be irregularly spaced.…”

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confidence: 99%

Thermal (Kapitza) resistance of interfaces in compositional dependent ZnO-In2O3 superlattices

Liang¹,

Baram²,

Clarke³

2013

Applied Physics Letters

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Compositionally dependent superlattices, In2O3(ZnO)k, form in the ZnO-rich portion of the ZnO-In2O3 phase diagram, decreasing thermal conductivity and altering both the electron conductivity and Seebeck coefficient over a wide range of composition and temperature. With increasing indium concentration, isolated point defects first form in ZnO and then superlattice structures with decreasing interface spacing evolve. By fitting the temperature and indium concentration dependence of the thermal conductivity to the Klemens-Callaway model, incorporating interface scattering and accounting for conductivity anisotropy, the Kapitza resistance due to the superlattice interfaces is found to be 5.0 ± 0.6 × 10−10 m2K/W. This finding suggests that selecting oxides with a compositionally dependent superlattice structure can be a viable approach, unaffected by grain growth, to maintaining low thermal conductivity at high temperatures.

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“…7, and the crystal structure of ZnO-based layered compounds. A structural element in a ZnO-based homologous structure, 41), 42) e.g., In2O3(ZnO)6, is a candidate structure for explaining the polarity inversion. As shown in Fig.…”

Section: Polarity Inversion Mechanismmentioning

confidence: 99%

Interface structure and polarity of GaN/ZnO heterostructure

Ohgaki

2009

J. Ceram. Soc. Japan

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Gallium nitride (GaN) films were grown with and without lattice-matched (In,Ga)N buffer layers on the c(+) and c(-) faces of ZnO single-crystal substrates using molecular beam epitaxy, and their interface structures, including the relationship between the crystallinity of the GaN film and the polarity of the ZnO substrate, were investigated. Growth at a high temperature (e.g., 800°C) was made possible by using an (In,Ga)N buffer layer, which improved the crystallinity of the GaN films compared with that of GaN films grown directly on a ZnO substrate. Ion scattering, i.e., coaxial impact-collision ion scattering spectroscopy, and electron beam channeling, i.e., convergent beam electron diffraction, profiles revealed that the GaN films grown on c(+)-and c(-)-ZnO substrates with an (In,Ga)N buffer layer had a (0001) surface (i.e., c(+) polarity). That is, polarity inversion occurs when GaN film is grown with an (In,Ga)N buffer layer on a c(-)-ZnO substrate.

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Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

Cited by 248 publications

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Structure analysis of new homologous compounds Ga₂O₃(ZnO) _m (m = integer) by high-resolution analytical transmission electron microscopy

Structure analysis of new homologous compounds Ga₂O₃(ZnO) _m (m = integer) by high-resolution analytical transmission electron microscopy

Thermal (Kapitza) resistance of interfaces in compositional dependent ZnO-In2O3 superlattices

Interface structure and polarity of GaN/ZnO heterostructure

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Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

Cited by 248 publications

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Structure analysis of new homologous compounds Ga2O3(ZnO) m (m = integer) by high-resolution analytical transmission electron microscopy

Structure analysis of new homologous compounds Ga2O3(ZnO) m (m = integer) by high-resolution analytical transmission electron microscopy

Thermal (Kapitza) resistance of interfaces in compositional dependent ZnO-In2O3 superlattices

Interface structure and polarity of GaN/ZnO heterostructure

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Structure analysis of new homologous compounds Ga₂O₃(ZnO) _m (m = integer) by high-resolution analytical transmission electron microscopy

Structure analysis of new homologous compounds Ga₂O₃(ZnO) _m (m = integer) by high-resolution analytical transmission electron microscopy