Syntheses of Liquid Phase [(efac)Ag(P(OR)<sub>3</sub>)] Precursors and Their Application to the Preparation of Silver and Silver Selenide Thin Films

doi:10.5012/bkcs.2004.25.7.1068

Cited by 4 publications

(1 citation statement)

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“…Nanometer-scale silver surfaces are widely used as SERS substrates [20][21][22][23][24][25][26][27]. Currently, the liquid phase synthesis method is preferred for the synthesis of silver nanostructures [28][29][30]. The preparation environment has limitations and it is difficult to integrate it with micrometer or nanometer processing technology in the solid state.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high performance surface enhanced Raman scattering substrates by a solid-state ionics method

Dong²,

Sun³

2012

Nanotechnology

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Silver nanostructures were prepared by a solid-state ionics method using fast ionic conductor RbAg(4)I(5) films under a direct current electric field (DCEF). The surface morphology of the silver nanostructures grown under different constant current fields was characterized by scanning electron microscopy (SEM). Rhodamine 6G (R6G) aqueous solutions were used as probe molecules to detect the Raman enhancement performance of the silver nanostructure substrates. The effect of external electric field current intensity on the surface morphology of the silver nanostructures during the preparation was studied in detail. The enhancement effect of the silver nanostructure surface enhanced Raman scattering (SERS) substrates with different surface morphologies toward R6G was determined. We found that disordered silver nanowires (DSNW), ordered silver nanowires (OSNW), densely arranged silver nanobamboo arrays (SNBA) and compactly arranged silver nanobud clusters (SNBC) were respectively obtained when the constant current intensity was 3 μA, 5 μA, 8 μA and 12 μA under the same vacuum evaporation plating conditions. The limiting concentrations of R6G for these SERS substrates were found to be 10(-7) mol l(-1), 10(-13) mol l(-1), 10(-13) mol l(-1) and 10(-16) mol l(-1), respectively.

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Section: Introductionmentioning

confidence: 99%

Fabrication of high performance surface enhanced Raman scattering substrates by a solid-state ionics method

Dong²,

Sun³

2012

Nanotechnology

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Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Winter

Knisley

Kalutarage

et al. 2012

Encyclopedia of Inorganic and Bioinorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high‐permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first‐row transition‐metal films from metal‐organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal‐organic precursor development is presented for each of these metallic elements.

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The CVD of silver selenide films from dichalcogenophosphinato and imidodichalcogenodiphosphinatosilver(I) single-source precursors

et al. 2009

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Syntheses of Liquid Phase [(efac)Ag(P(OR)₃)] Precursors and Their Application to the Preparation of Silver and Silver Selenide Thin Films

Cited by 4 publications

References 10 publications

Fabrication of high performance surface enhanced Raman scattering substrates by a solid-state ionics method

Fabrication of high performance surface enhanced Raman scattering substrates by a solid-state ionics method

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

The CVD of silver selenide films from dichalcogenophosphinato and imidodichalcogenodiphosphinatosilver(I) single-source precursors

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Syntheses of Liquid Phase [(efac)Ag(P(OR)3)] Precursors and Their Application to the Preparation of Silver and Silver Selenide Thin Films

Cited by 4 publications

References 10 publications

Fabrication of high performance surface enhanced Raman scattering substrates by a solid-state ionics method

Fabrication of high performance surface enhanced Raman scattering substrates by a solid-state ionics method

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

The CVD of silver selenide films from dichalcogenophosphinato and imidodichalcogenodiphosphinatosilver(I) single-source precursors

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Syntheses of Liquid Phase [(efac)Ag(P(OR)₃)] Precursors and Their Application to the Preparation of Silver and Silver Selenide Thin Films