Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices

Ao, Jin‐Ping; Shiraishi, Takauki; Li, Liuan; Kishi, Akinori; Ohno, Yasuo

doi:10.1166/sam.2014.1936

Cited by 6 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In previous studies, we evaluated the annealing temperature and time dependent electrical properties of AlGaN/ GaN HFETs utilizing reactive sputtering TiN/W/Au as the gate electrode. The results demonstrated that the optimized ohmic contact annealing temperature of the Ti-based multilayers on GaN-based materials is about 800 °C and the TiN/ W/Au gate can withstand the 800 °C annealing for 1 or 3 min, which means that the TiN Schottky gate is suitable for application in gate-first process of AlGaN/GaN HFETs [5][6][7]. However, the device performance suffers from the increase of gate leakage current after annealing.…”

Section: Introductionmentioning

confidence: 99%

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

Wang

et al. 2014

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

In this paper, the influence of deposition conditions and post annealing upon the device performance of sputtering-deposited TiN/AlO/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors is reported. The metal-oxide-semiconductor structure on GaN with AlO deposited in a medium O 2 /Ar ratio possessed the smallest interfacial state density and reverse leakage current. Metal-oxide-semiconductor heterostructure field-effect transistors with a small hysteresis and a low leakage current were obtained by depositing AlO with a medium O 2 /Ar ratio and post-annealing at 600 °C for 1 min. After annealing, the maximum transconductance shows some decrease, resulting in a decrease of saturation drain current.

show abstract

Section: Introductionmentioning

confidence: 99%

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

Wang

et al. 2014

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In previous studies, we have evaluated the electrical performance of Schottky contacts produced using different kinds of refractory metal nitrides such as titanium nitride (TiN), MoN, TaN, MoSiN, WTiN, ZrN, and HfN on GaN by reactive sputtering in an ambient of Ar and N 2 mixture sputtering gas [ 6 - 8 ]. Considering the adhesion on GaN, sheet resistivity, reverse leakage current, SBH, and thermal stability of these devices, we regard TiN as the suitable material for the Schottky electrode.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Nakamura

Wang

et al. 2014

Nanoscale Res Lett

Self Cite

View full text Add to dashboard Cite

In this study, titanium nitride (TiN) is synthesized using reactive sputtering for a self-aligned gate process. The Schottky barrier height of the TiN on n-GaN is around 0.5 to 0.6 eV and remains virtually constant with varying nitrogen ratios. As compared with the conventional Ni electrode, the TiN electrode presents a lower turn-on voltage, while its reverse leakage current is comparable with that of Ni. The results of annealing evaluation at different temperatures and duration times show that the TiN/W/Au gate stack can withstand the ohmic annealing process at 800°C for 1 or 3 min. Finally, the self-aligned TiN-gated AlGaN/GaN heterostructure field-effect transistors are obtained with good pinch-off characteristics.

show abstract

“…GaN is chemically stable and can be used in most solutions. Furthermore, AlGaN/GaN heterostructures can be developed based on the GaN material series that possesses a 2-dimensional electron gas (2DEG) layer with high mobility, high saturation electron velocity and high electron density [6][7][8][9][10]. It is possible to improve the sensitivity and time response for this reason.…”

Section: Introductionmentioning

confidence: 99%

Surface Dependence of pH Sensors on AlGaN/GaN Heterostructure

et al. 2014

View full text Add to dashboard Cite

A pH sensor on an AlGaN/GaN heterostructure with differentsurface conditions was developed and evaluated. The averagesensitivity is 49.5, 47.2 and 51.8 mV/pH, respectively, forsamples with i-GaN, p-GaN and n-GaN cap layers on the AlGaNsurface. The average sensitivity is 52.9, 53.5, 54.1, and 55.2mV/pH, respectively, for the samples with an AlGaN surface andAl composition of 22%, 24%, 25%, and 35%. The sensitivity ofthe pH sensor on AlGaN/GaN heterostructure increases if theAlGaN surface is adopted and increases with increasingaluminum composition.

show abstract

Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices

Cited by 6 publications

References 1 publication

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Surface Dependence of pH Sensors on AlGaN/GaN Heterostructure

Contact Info

Product

Resources

About