The efficiency of thermoelectric devices is a function of the non-dimensional figure of merit ZT [1] of the material, whereT is the absolute temperature and Z = ra 2 /j; a = thermoelectric power or the Seebeck coefficient, r = electrical conductivity, j = thermal conductivity; the numerator of Z is referred to as the power factor. State-of-the-art thermoelectric materials usable for cooling and power generation have a ZT ∼ 1, whereas a ZT ∼ 4 is necessary to surpass competing technologies.[2] Factorial enhancements in ZT may be obtained by introducing nanoscopic geometrical confinement in one, two, or three dimensions, for example, nanolayered quantum-well superlattices, nanowires, and quantum-dot superlattices, respectively. [3][4][5][6] Increased scattering of heat carriers at interfaces and nanostructure boundaries are thought to decrease j, while changes in charge carrier density near the Fermi level offers possibilities for increasing r and a. [3,6,[7][8][9][10][11] Decreases in j have been observed across Bi 2 Te 3 /Sb 2 Te 3 nanolayer superlattices, [3] giving rise to approximately twofold increase of ZT (highest reported ZT ∼ 2.3). Even larger ZT increases (approximately fivefold compared with the bulk value) due mainly to the reduction of j have been observed in PbSeTe/ PbTe quantum-dot superlattices.[6] However, the magnitude of ZT is only ca. 1.6 since PbSeTe/PbTe bulk has a lower ZT than Bi 2 Te 3 /Sb 2 Te 3 . Lowering the thermal conductivity of materials with an inherently high ZT in the bulk form (e.g., bismuth telluride), by introducing 3D confinement, that is, producing nanoparticles, is expected to yield higher ZT values. This approach could also allow the tuning of quantum effects by tailoring the nanoparticle size and shape, to facilitate additional mechanisms for increasing ZT. Indeed, power-factor increases have been predicted to arise from such effects in wellorganized Si/Ge nanoparticle arrays.[11] Hence, synthesis and assembly of nanoparticles of bismuth telluride is of interest to enable the development of higher efficiency devices for thermoelectric cooling and power generation. Bismuth telluride nanoparticles with diameters of ca. 100 nm have been synthesized by several routes. Examples include melting the constituent elements in sealed vessels above 600°C; [12] low-temperature (ca. 30°C) precipitation by reacting tris(dimethylamine) bismuthine and bis(trimethylsilyl) telluride in hexane, and subsequent annealing at 160°C; [13] co-precipitation of bismuth and tellurium oxides in water followed by hydrogen reduction; [14] or through reduction of organometallic complexes. [15] Smaller (e.g., 20-40 nm) nanostructures can be realized by solvothermal techniques [16,17] using precursors in solvents such as N,N-dimethylformamide or water at 100-180°C in reducing ambients. The high temperatures or long reaction times in these reactions, however, are not conducive for obtaining nanostructures smaller than 20 nm, which is the size regime where quantumconfinement effects are expected to be signif...