Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors

Alderhami, Suliman A.; Ahumada-Lazo, Rubén; Buckingham, Mark A.; Binks, David J.; O’Brien, Paul; Collison, David; Lewis, David J.

doi:10.1039/d3dt00239j

Cited by 6 publications

(2 citation statements)

References 75 publications

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“…This approach is particularly diverse and can be extended well beyond the synthesis of simple binary metal sulfides. 80 By decomposing different precursors in tandem, it is possible to dope binary species (e.g., Ga/In doping into CdS), 81 as well as to synthesize ternary (e.g., various phases of CuSbS) 82 and higher metal sulfides (e.g., CuZnSnS). 80 It is also possible to synthesize metal oxides by decomposing the precursors in air, 83 or metal selenides and tellurides by exploiting different ligands to prepare the precursors.…”

Section: Atom-up Synthetic Strategies For He Materialsmentioning

confidence: 99%

Synthetic Strategies toward High Entropy Materials: Atoms-to-Lattices for Maximum Disorder

Buckingham,

Skelton,

Lewis

2023

Crystal Growth & Design

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High-entropy materials are a nascent class of materials that exploit a high configurational entropy to stabilize multiple elements in a single crystal lattice and to yield unique physical properties for applications in energy storage, catalysis, and thermoelectric energy conversion. Initially, the synthesis of these materials was conducted by approaches requiring high temperatures and long synthetic time scales. However, successful homogeneous mixing of elements at the atomic level within the lattice remains challenging, especially for the synthesis of nanomaterials. The use of atom-up synthetic approaches to build crystal lattices atom by atom, rather than the top-down alteration of extant crystalline lattices, could lead to faster, lower-temperature, and more sustainable approaches to obtaining high entropy materials. In this Perspective, we discuss some of these state-of-the-art atom-up synthetic approaches to high entropy materials and contrast them with more traditional approaches.

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Section: Atom-up Synthetic Strategies For He Materialsmentioning

confidence: 99%

Synthetic Strategies toward High Entropy Materials: Atoms-to-Lattices for Maximum Disorder

Buckingham,

Skelton,

Lewis

2023

Crystal Growth & Design

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“…41 Unsurprisingly, investigations into CdS single-source precursors often overlap with those of ZnS, including the use of compounds featuring thiourea, [42][43][44] thiobiurets, 38,45 thiocarboxylates 35 and thiocarbamates. [46][47][48][49][50][51][52] Additionally, dithioactylacetonates, 53 xanthates [54][55][56][57] and dialkyldithiophosphates [58][59][60][61] have been studied, often for deployment in solvothermal processes. Despite the interest in CdS buffer layers, only a handful of single-source precursor designs have been used in AACVD.…”

Section: Introductionmentioning

confidence: 99%

Zinc and cadmium thioamidate complexes: rational design of single-source precursors for the AACVD of ZnS

Robson,

Johnson

2024

Dalton Trans.

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High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La₂S₃ Trichalcogenide Semiconductor

Jaffri,

Ahmad,

Maley

et al. 2024

Physica Status Solidi (a)

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Using single‐source precursor route, this work reports the synthesis of the novel chalcogenide heterosystem, i.e., BaS:CoS:La2S3 trichalcogenide heterosystem. With the narrowed band gap energy, BaS:CoS:La2S3 expresses excellent photonic response with 3.47 eV of tailored band gap resulting from chemical synergism. This chalcogenide is marked by superior crystallinity and possessed an average crystallite size of 18.29 nm. Morphologically, BaS:CoS:La2S3 exists in the form of the roughly spherical grains arranged in the irregular manner. The developed chalcogenide is assessed for charge storage by fabricating the electrode using a nickel form as a support. In a 0.1 m KOH background electrolyte, the BaS:CoS:La2S3 adorns electrode excelled in achieving a specific capacitance of 967.24 F g−1. In addition, this trichalcogenide expresses the specific power density of 1659 W kg−1. Fabricated electrode retains original capacitance after different cycles. Regarding electrode–electrolyte interactions, the fabricated electrode shows minimal resistance, with an equivalent series resistance (Rs) of 1.42 Ω as indicated by impedance studies. Additional circuit elements, including CPE (Yo = 2.17 × 10−04, n = 0.71) and Rct (6.97 Ω cm−2), are obtained after circuit fitting for the BaS:CoS:La2S3 trichalcogenide decorated electrode. Exhibiting stable behavior for 43 h, the synthesized material demonstrates profound durability and functionality.

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Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors

Abstract: We report a facile and low temperature synthesis of Ga3+- and In3+-doped CdS from molecular precursors. Diethyldithiocarbamate complexes of Cd(II), Ga(III), and In(III), were synthesised and decomposed in tandem through...

Cited by 6 publications

References 75 publications

Synthetic Strategies toward High Entropy Materials: Atoms-to-Lattices for Maximum Disorder

Synthetic Strategies toward High Entropy Materials: Atoms-to-Lattices for Maximum Disorder

Zinc and cadmium thioamidate complexes: rational design of single-source precursors for the AACVD of ZnS

High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La₂S₃ Trichalcogenide Semiconductor

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Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors

Abstract: We report a facile and low temperature synthesis of Ga3+- and In3+-doped CdS from molecular precursors. Diethyldithiocarbamate complexes of Cd(II), Ga(III), and In(III), were synthesised and decomposed in tandem through...

Cited by 6 publications

References 75 publications

Synthetic Strategies toward High Entropy Materials: Atoms-to-Lattices for Maximum Disorder

Synthetic Strategies toward High Entropy Materials: Atoms-to-Lattices for Maximum Disorder

Zinc and cadmium thioamidate complexes: rational design of single-source precursors for the AACVD of ZnS

High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La2S3 Trichalcogenide Semiconductor

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Product

Resources

About

High‐Performance Electrode for Energy Storage Developed Using Single‐Source Precursor‐Driven Bas:Cos:La₂S₃ Trichalcogenide Semiconductor