Synthesis and Characteristics of Type Ib Diamond Doped with NiS as an Additive

Wang, Jiankang; Li, Shangsheng; Wang, Ning; Liu, Huijie; Su, Taichao; Hu, Meihua; Han, Fei; Kang, Yu; Hong-yan, MA

doi:10.1088/0256-307x/36/4/046101

Cited by 9 publications

(2 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, type IIa diamond has an irreplaceable role, for example, it can be used as an optical window material of laser transmitter and has more advantageous to synthesize new semiconductors by adding sulfur, phosphorus and boron. [10][11][12][13] Presently, a large number of researchers have devoted to study of type IIa synthetic diamond.…”

Section: Introductionmentioning

confidence: 99%

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi–C system*

Guo

et al. 2020

Chinese Phys. B

Self Cite

View full text Add to dashboard Cite

High-quality type IIa large diamond crystals are synthesized with Ti/Cu as nitrogen getter doped in an FeNi–C system at temperature ranging from 1230 °C to 1380 °C and at pressure 5.3–5.9 GPa by temperature gradient method. Different ratios of Ti/Cu are added to the FeNi–C system to investigate the best ratio for high-quality type IIa diamond. Then, the different content of nitrogen getter Ti/Cu (Ti : Cu = 4 : 3) is added to this synthesis system to explore the effect on diamond growth. The macro and micro morphologies of synthesized diamonds with Ti/Cu added, whose nitrogen concentration is determined by Fourier transform infrared (FTIR), are analyzed by optical microscopy (OM) and scanning electron microscopy (SEM), respectively. It is found that the inclusions in the obtained crystals are minimal when the Ti/Cu ratio is 4:3. Furthermore, the temperature interval for diamond growth becomes narrower when using Ti as the nitrogen getter. Moreover, the lower edge of the synthesis temperature of type IIa diamond is 25 °C higher than that of type Ib diamond. With the increase of the content of Ti/Cu (Ti : Cu = 4 : 3), the color of the synthesized crystals changes from yellow and light yellow to colorless. When the Ti/Cu content is 1.7 wt%, the nitrogen concentration of the crystal is less than 1 ppm. The SEM results show that the synthesized crystals are mainly composed by (111) and (100) surfaces, including (311) surface, when the nitrogen getter is added into the synthesis system. At the same time, there are triangular pits and dendritic growth stripes on the crystal surface. This work will contribute to the further research and development of high-quality type IIa diamond.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi–C system*

Guo

et al. 2020

Chinese Phys. B

Self Cite

View full text Add to dashboard Cite

show abstract

“…Due to its exceptional properties, such as wide bandgap, high carrier mobility, high thermal conductivity, extreme hardness, diamond has tremendous advantages to be used as a semiconductor, heat sink, cutting tools, or gems. [1][2][3][4][5] The single crystal diamond (SCD) has better properties than the polycrystalline diamond (PCD), since it has no grain boundaries. However, the lack of the large diamond substrate blocks the development of the SCD severely.…”

Section: Introductionmentioning

confidence: 99%

Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface*

Ren

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

We report the simultaneous enlarged growth of seven single crystal diamond (SCD) plates free from polycrystalline diamond (PCD) rim by using a microwave plasma chemical vapor deposition (MPCVD) system. Optical microscope and atomic force microscope (AFM) show the typical step-bunching SCD morphology at the center, edge, and corner of the samples. The most aggressively expanding sample shows a top surface area three times of that of the substrate. The effective surface expanding is attributed to the utilization of the diamond substrates with (001) side surfaces, the spacial isolation of them to allow the sample surface expanding, and the adoption of the reported pocket holder. Nearly constant temperature of the diamond surfaces is maintained during growth by only decreasing the sample height, and thus all the other growth parameters can be kept unchanged to achieve high quality SCDs. The SCDs have little stress as shown by the Raman spectra. The full width at half maximum (FWHM) data of both the Raman characteristic peak and (004) x-ray rocking curve of the samples are at the same level as those of the standard CVD SCD from Element Six Ltd. The nonuniformity of the sample thickness or growth rate is observed, and photoluminescence spectra show that the nitrogen impurity increases with increasing growth rate. It is found that the reduction of the methane ratio in the sources gas flow from 5% to 3% leads to decrease of the vertical growth rate and increase of the lateral growth rate. This is beneficial to expand the top surface and improve the thickness uniformity of the samples. At last, the convenience of the growth method transferring to massive production has also been demonstrated by the successful simultaneous enlarged growth of 14 SCD samples.

show abstract

The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure

Guo

Lü

et al. 2020

New Carbon Materials

View full text Add to dashboard Cite

Synthesis and Characteristics of Type Ib Diamond Doped with NiS as an Additive

Cited by 9 publications

References 33 publications

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi–C system*

Growth characteristics of type IIa large single crystal diamond with Ti/Cu as nitrogen getter in FeNi–C system*

Multiple enlarged growth of single crystal diamond by MPCVD with PCD-rimless top surface*

The effect of adding Cu on the nitrogen removal efficiency of Ti for the synthesis of a large type IIa diamond under high temperature and high pressure

Contact Info

Product

Resources

About