Synthesis and characterization of BaVS3 single crystals grown in melted Te

Kuriyaki, Hisao; Berger, H.; Nishioka, S.; Kawakami, Nozomi; Hirakawa, Kazuyoshi; Lévy, F.

doi:10.1016/0379-6779(94)03160-8

Cited by 19 publications

(18 citation statements)

References 9 publications

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“…11 The data were collected at the PGM beamline of the SRC ͑Stoughton, WI and with a Scienta-2002 analyzer. The spectra presented were measured with a total energy and momentum resolution of ⌬E = 15 meV and ⌬k = 0.04 Å −1 .…”

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confidence: 99%

Experimental electronic structure and Fermi-surface instability of the correlated3dsulphideBaVS3: High-resolution

et al. 2007

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The correlated 3d sulphide BaVS 3 exhibits an interesting coexistence of one-dimensional and threedimensional properties. Our experiments determine the electronic band structure and shed light on this puzzle. High-resolution angle-resolved photoemission measurements in a 4-eV-wide range below the Fermi energy level uncover and investigate the coexistence of a 1g wide-band and e g narrow-band d electrons, which lead to the complicated electronic properties of this material. We explore the effects of strong correlations and the Fermi surface instability associated with the metal-insulator transition.

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Experimental electronic structure and Fermi-surface instability of the correlated3dsulphideBaVS3: High-resolution

et al. 2007

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“…8 Several long needlelike crystals were cut perpendicular to the chain direction. In this study, we use six samples, coming from two single crystals.…”

Section: Methodsmentioning

confidence: 99%

Influence of point defects on the metal-insulator transition inBaVS3

et al. 2008

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To investigate the nature of the metal-insulator transition which takes place in BaVS 3 at T MIT =70 K, we study pure samples of BaVS 3 irradiated by fast electrons, which introduce point defects. Our results show that the metal-insulator transition is gradually weakened and shifted to lower temperatures by introducing the defects, in close analogy to systems where metal-insulator transition is due to a Peierls mechanism. Additionally, we study the influence of point defects on the temperature-pressure phase diagram of BaVS 3 .

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“…The HAXPES spectra were taken by using a hemispherical analyzer (VG SCIENTA R4000) and the overall energy resolution was set to 240 meV for the spectra near E F and 150 meV for the Ba 3d 5/2 and S 1s core spectra. Single-crystalline samples with typical size of 0.5 × 0.5 × 5 mm 3 were prepared by the tellurium flux method [12]. Figure 1 shows the temperature dependence of the HAXPES spectra in the vicinity of E F of BaVS 3 measured at hν = 5.95 keV.…”

Section: Methodsmentioning

confidence: 99%

Hard X-Ray Photoemission Spectroscopy of Quasi-One-Dimensional BaVS₃

Sato

Tobimatsu

Tanaka

et al. 2014

Proceedings of the 12th Asia Pacific Physics Conference (APPC12)

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Electronic structure of quasi-one-dimensional BaVS 3 with metal-insulator transition at 70 K has been investigated by hard x-ray photoemission spectroscopy (HAXPES). An energy gap of 60 meV across the transition temperature is observed in the HAXPES spectra near the Fermi level. Line widths of the Ba 3d 5/2 and S 1s spectra continuously decrease on cooling. The analyses based on the Debye model give the Debye temperature of Θ D = 250 ± 50 K, which is consistent with Θ D = 200 K derived from the specific heat measurements.

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Synthesis and characterization of BaVS3 single crystals grown in melted Te

Cited by 19 publications

References 9 publications

Experimental electronic structure and Fermi-surface instability of the correlated3dsulphideBaVS3: High-resolution

Experimental electronic structure and Fermi-surface instability of the correlated3dsulphideBaVS3: High-resolution

Influence of point defects on the metal-insulator transition inBaVS3

Hard X-Ray Photoemission Spectroscopy of Quasi-One-Dimensional BaVS₃

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Synthesis and characterization of BaVS3 single crystals grown in melted Te

Cited by 19 publications

References 9 publications

Experimental electronic structure and Fermi-surface instability of the correlated3dsulphideBaVS3: High-resolution

Experimental electronic structure and Fermi-surface instability of the correlated3dsulphideBaVS3: High-resolution

Influence of point defects on the metal-insulator transition inBaVS3

Hard X-Ray Photoemission Spectroscopy of Quasi-One-Dimensional BaVS3

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Product

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Hard X-Ray Photoemission Spectroscopy of Quasi-One-Dimensional BaVS₃