ing anneal at 90±150 C, optionally in a high-humidity atmosphere. Under optimized conditions we measured an increase in contact angle for PEDOT/PSS ink from 0 on pure PEDOT/PSS films to 90 on PEDOT/PSS films with added benzalkonium chloride. Field-effect transistors (FETs) were fabricated by spin-coating the semiconducting polymer poly(9,9-dioctylfluorene-co-bithiophene) (F8T2, Dow Chemical Company) and a poly(methyl methacrylate) (PMMA, Aldrich) dielectric onto self-aligned printed source±drain electrodes and inkjet printing of PEDOT/PSS gate electrodes. Film thicknesses for F8T2 and PMMA were 30 nm and 120±300 nm, respectively.