Synthesis and characterization of CdS/PVA nanocomposite thin films from a complexing agent free system

Fabrication and characterization of electrospun PVA/CdS and PVA/TiO2 nanocomposite thin films as n-type semiconductors

“…The X-ray diffractogram of PVA/CdS nanocomposites shows broadened diffraction profiles. The peaks were detected at around 2h = 26.5°and 43.3°which can be ascribed due to the cubic CdS structure [27,44,45]. These peaks can be indexed to the planes (111) and (220) [46].…”

“…were used as an alternative to ammonia. Another approach to ammonia-free synthesis of CdS is the use of polymer for synthesizing semiconductor nanoparticles in thin film which provide the advantages such as (i) higher band gap, (ii) good adherence to the substrate and (iii) better coverage of the surface minimizing pin-holes and thereby permitting the use of very thin film of semiconductor (\100 nm) as a window layer in solar cell [27]. Life of the composites and their brightness of light emission are enhanced by the existence of semiconductor nanoparticles in polymeric matrices [28].…”

“…Life of the composites and their brightness of light emission are enhanced by the existence of semiconductor nanoparticles in polymeric matrices [28]. Nanocomposites impart several advantages such as greater chemical and thermal stability, increased strength, enhanced electrical conductivity, and improved flammability properties to polymeric matrix [29].There are many reports on the synthesis of semiconductor nanoparticles embedded into polymeric matrices [27,28,[30][31][32][33][34][35][36].…”

Synthesis of polymer–PbS nanocomposite by solar irradiation-induced thermolysis process and its photovoltaic applications

“…The technique reported here is a modification of our earlier work for the deposition of CdS/PVA nanocomposite thin film [25] in which the thermolysis was induced by the heat treatment method. Lead acetate, thiourea and PVA were used as the raw materials for the preparation of PbS-polymer nanocomposite thin film.…”

“…First, the glass substrate was covered by $230 nm thick layer of transparent conducting oxide (TCO), which in our case is tin oxide (SnO 2 ). The CdS/PVA thin film was then deposited on the top of TCO to a thickness of approximately 100 nm by the method as described in our earlier work [25]. Before deposition of PbS thin film, the CdS film was annealed for 1 h at 60 C. A layer of PbS of thickness $670 nm was then deposited on the top by the technique developed in this study and then annealed at 60 C for 1 h. Finally, a layer of HgTe was deposited on the top as a back contact by the thermal evaporation method at a pressure 510-6 mbar.…”