Synthesis and characterization of CdTe/CdSe thin film on glass/ITO by electrodeposition at room temperature

Özmen, Sevda Ildan; Gubur, Hulya Metin

doi:10.1007/s12034-021-02653-6

Cited by 7 publications

(4 citation statements)

References 38 publications

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“…The peaks that belong to the CdSe films summarized in Table (1) and peak intensity comparisons show strong agreement with baseline JCPDS data [33].…”

Section: Fig 2 Xrd Pattern Of Deposition Films Vs Substrate Temperaturesupporting

confidence: 70%

“…Cadmium Selenide CdSe is one of the most important chalcogenide semiconductor materials and belongs to the II-VI group, which has a cubic or hexagonal structure, high sensitivity of light at the visible region, and can be prepared as an n-type semiconductor [1][2][3][4], it has also an electrical resistivity 105-106Ω.cm. Due to the high absorption coefficient and photoconductivity with direct band gap and 1.74eV and the electron mobility of 450-900 cm2 /V •s and indirect band gap of 1.23-1.25eV [5][6][7][8][9], which exhibits a powerful photoelectric effect when activated by visible light, falls within the solar spectrum's visible light range.…”

Section: Introductionmentioning

confidence: 99%

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Structural and optical properties of cadmium selenide thin film growth with different substrate temperatures by spray pyrolysis deposition

Al Abbas,

Al Taan,

Uonis

2023

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In this work, cadmium selenide (CdSe) thin films were deposited successfully by spray pyrolysis at different substrate temperatures. The influence of the preparation technique on the optical, morphological, and structural properties of the different substrate temperature CdSe films were investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), and UV-Visible optical transmission. The XRD analysis reveals that CdSe thin film has hexagonal (wurtzite) and (cubic) crystal structures with different particle sizes depending on the substrate temperature. The SEM image shows uniform and adherent crystals. The optical energy gap was found to be in the range of 1. 70 – 2.59 eV with different temperatures.

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“…The peaks that belong to the CdSe films summarized in Table (1) and peak intensity comparisons show strong agreement with baseline JCPDS data [33].…”

Section: Fig 2 Xrd Pattern Of Deposition Films Vs Substrate Temperaturesupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of cadmium selenide thin film growth with different substrate temperatures by spray pyrolysis deposition

Al Abbas,

Al Taan,

Uonis

2023

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“…Due to their high absorption coefficient and direct energy band gap in the range (1.45-3.7) eV, semiconductor thin films of II-VI compounds, such as CdTe, CdSe, CdS, ZnS, and ZnSe are used for solar cell applications [1,2]. Specifically, CdTe thin film is used as absorber material for solar energy harvesting in solar cells owing to its near-ideal band gap of about 1.5 eV [3].…”

Section: Introductionmentioning

confidence: 99%

“…For the CdTe thin film growth, two-electrode and three-electrode configurations are used in the electrodeposition system [1,30]. In this paper, we use a two-electrode method since it has some advantages compared to three electrodes.…”

Section: Introductionmentioning

confidence: 99%

Influence of growth time on the properties of CdTe thin films grown by electrodeposition using acetate precursor for solar energy application

Yimamu

Afrassa

Dejene

et al. 2023

Mater. Res. Express

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Cadmium telluride (CdTe) thin films were deposited using a two-electrode electrodeposition configuration from an aqueous acidic solution. The electrolyte solution contains 1 M of cadmium acetate dihydrate (Cd (CH3OO) 2.2H2O) as cadmium precursor and 1 ml of tellurium dioxide (TeO2) as tellurium precursor. The thin films were grown for different deposition times of 60, 120, 180, 240, and 300 min to investigate the effect of the deposition period on the structural, optical, electrical, surface morphology, elemental composition, and surface roughness properties of the CdTe thin films in both as-deposited and heat-treated forms. X-ray diﬀraction (XRD) analysis indicates that the CdTe thin films have polycrystalline cubic zinc blend, orthorhombic and hexagonal structures. The result confirmed that the cubic phase is dominant and (111) plane is the preferential orientation peak. Ultraviolet-visible (UV-Vis) spectrophotometry study shows that the band gap of the as-deposited thin films varies from (1.41-1.45) eV, and after heat treatment, the band gap decreased to (1.35-1.42) eV. Photoelectrochemical cell (PEC) measurements show that CdTe thin films have n-type conductivity in both as-deposited and annealed forms. Scanning electron microscopy (SEM) analysis shows that the surface morphology of CdTe thin films changed as the deposition period increases. After heat treatment, the improvement in grain size was observed. Energy-dispersive X-ray spectroscopy (EDS) analysis shows that the percentage composition of as-deposited CdTe thin films varied with deposition time, with the best composition being recorded at 120 min deposition time. After post-deposition heat treatment (HT), the elemental compositions of Te decreased, and that of Cd increased. When the thin film was deposited at 120 min, the film with stoichiometric composition was observed after heat treatment. Scanning probe microscopy (SPM) measurements revealed that the average surface roughness of the thin films varied with deposition time, with the sample grown for 120 min showing the highest roughness.

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Recent Progress of 2D Materials‐Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

Abdullah,

Younis,

Sohail

et al. 2024

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Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic‐thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip‐scale production and integration of 2D materials‐based photodetectors. The extremely sensitive detection at ambient temperature with ultra‐fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials‐based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.

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Synthesis and characterization of CdTe/CdSe thin film on glass/ITO by electrodeposition at room temperature

Cited by 7 publications

References 38 publications

Structural and optical properties of cadmium selenide thin film growth with different substrate temperatures by spray pyrolysis deposition

Structural and optical properties of cadmium selenide thin film growth with different substrate temperatures by spray pyrolysis deposition

Influence of growth time on the properties of CdTe thin films grown by electrodeposition using acetate precursor for solar energy application

Recent Progress of 2D Materials‐Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications

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