2017
DOI: 10.1016/j.egypro.2017.03.125
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Synthesis and Characterization of Chemical Spray Pyrolysed CZTS Thin Films for Solar Cell Applications

Abstract: In present work, thin films of CZTS have been prepared by chemical spray pyrolysis (CSP) by spraying precursor solution directly onto the soda lime glass (SLG) substrates by varying sulphur molar concentration. Copper chloride [CuCl2.2H2O], zinc chloride [ZnCl2.2H2O], tin chloride [SnCl4.5H2O] and thiourea [(NH2)2CS] were used as precursor materials to deposit CZTS thin films by using home-built chemical spray pyrolysis system. Influence of sulphur variation on structural, optical, morphology and electrical pr… Show more

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Cited by 54 publications
(15 citation statements)
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“…XRD spectra of CZTS thin film lattice planes respectively. Similar structure have been reported byDiwate, K et al(2017) …”
supporting
confidence: 90%
See 1 more Smart Citation
“…XRD spectra of CZTS thin film lattice planes respectively. Similar structure have been reported byDiwate, K et al(2017) …”
supporting
confidence: 90%
“…The full width at half maximum (FWHM) was obtained from Lorentzian fit of (112) preferential peak. The crystallite size (D) was calculated using following Sucherrer relation (15) and displayed in Table 1.…”
Section: Physical Characterizationmentioning
confidence: 99%
“…Peaks at 288 cm −1 are attributed to the vibration of the Zn atoms and S atoms with some contribution from the Cu atoms in CZTS lattice [24]. The secondary phase Cu 2 S, observed in the XRD pattern (Figure 2) is not observed in the Raman spectra, a feature made evident by the absence of peaks at 475 cm −1 [25]. This suggests that Cu 2 S could be in the bulk of the film, seen by XRD, but not easily reached by Raman.…”
Section: Resultsmentioning
confidence: 99%
“…The effect of sulfur concentration on the film properties was studied by Kiran Diwate et al in 2017. The molar concentration of the precursors for Cu, Zn, and Sn were kept constant at 0.04, 0.02, and 0.02 M, respectively, changing the thiourea concentration alone from 0.12 to 0.18 M. The substrate temperature was fixed at 598 K. As S concentration was increased from 0.012 to 0.16 M, the thickness of the film decreased from 505 to 392 nm and again increased for 0.018 M indicating the complex process of formation of the quaternary compound.…”
Section: Effect Of Process Parametersmentioning
confidence: 99%