Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

Studies on copper zinc tin sulpher selenide (CZTSSe) thin-film material and its applications as a base material are intensively being researched since it is an earth-abundant, inexpensive, flexible, and interesting material for next-generation optoelectronic technologies. Apropos, this study explores and reports the synthesis of CZTSSe thin films and their key optoelectronics characteristics. The reported films are fabricated on a soda-lime glass substrate by using a physical vapor deposition technique, and then annealed from 250 to 450°C. From the X-ray diffraction analysis, the structure of the as-deposited thin films is found to be amorphous in nature. Annealed thin films of CZTSSe exhibit polycrystalline nature with an average crystallite size of 46.3 nm in tetragonal structure. To determine the bandgap energy, as well as optical properties, the visible spectrophotometer, and four-probe techniques, are used. From the measurements, the bandgap energy of the annealed film is found to be 1.64 eV at 450°C which is in the optimal range as an absorber layer for solar cell devices. Similarly, by employing the four-probe technique, I-V characteristics for the as-deposited thin films, the material shows non-ohmic behavior whereas the annealed film demonstrates partially ohmic with a resistance of 670 ohms.

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“…The relations [27][28][29] between the bandgap energy (E g ) and absorption coefficients ( ) is expressed as follows…”

Section: Bandgapmentioning

confidence: 99%

“…[30] As CZTSSe has a direct bandgap, therefore, n = 1/2 is used. [27] The values of "E g " were calculated by extrapolating the linear part of the curve drawn between "h " and ( h ) 2 to the horizontal axis for the photon energy. Figure 5 shows the plots of the bandgap evaluated for the as-deposited as well as the annealed samples.…”

Section: Bandgapmentioning

confidence: 99%

A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin‐Film Material for Next Generation Solar Technology

Ali

Zubair

Khesro

et al. 2021

Crystal Research and Technology

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“…Bismuth chalcogenides, for instance, Bi 2 S 3 , BiSe, CuBiS, CsBi 4 Te 6 indicates fascinating non-linear optical characteristics far beyond the second harmonic effect [5][6]. Bismuth Triiodide as a contender thin-film photovoltaic absorber has established for its optical properties and the potential for "defect-tolerant" charge drift properties, which proved by measuring optical absorption and recombination lifetimes.…”

Section: Introductionmentioning

confidence: 99%

Development of chitosan base PbBiS2 thin films for photovoltaic application

Shanthi¹,

Yogananthb²,

Anandhavelu³

et al. 2022

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Novel poly-crystalline nature of chitosan (CS) based Lead Bismuth Sulphide (PbBiS2) thin films have been deposited at different deposition temperatures by chemical bath deposition (CBD), a lucid and low cost technique. Structural, optical and electrical properties of the films were investigated using X-ray diffraction (XRD), Energy dispersive analysis of X-ray (EDAX), Scanning Electron Microscopy (SEM), Spectrophotometry, Photoluminescence, Hall Effect and Current-Voltage (I-V) estimations. The films were identified to be polycrystalline with orthorhombic shape. The films exhibited a highly reflective surface with a metal appearance. The optical band differences on the films ranged from 2.22 to 1.97 eV. The negative nature of the Hall coefficients indicated that the majority of load-carrying materials were electrons. The intensity of the photo-luminescence emission was increased. Current-voltage measurements reported the semiconductor nature of the film. The prepared thin films are suitable for solar cell applications.

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“…These materials generally show large absorption coefficients, good chemical stability, and band gap energies in the range from 1.2-1.7 eV, which are considered very right one for photovoltaic and thermoelectric applications [1,2]. Some of the bismuth chalcogenides such as Bi2S3, BiSe, CuBiS, CsBi4Te6 also show interesting nonlinear optical characteristics, above and beyond the second harmonic effect [3,4]. However, the key reason for their such attractive structural and optoelectronic properties is the stereochemical activity of 6s 2 lone pair electrons of the bismuth [3].…”

Section: Introductionmentioning

confidence: 99%

Crystallized InBiS3 thin films with enhanced optoelectronic properties

Ali

Hussain

Ahmed

et al. 2018

Applied Surface Science

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In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD) analysis confirmed the crystalline orthorhombic structure for the postannealed samples. Surface roughness and crystal size of the obtained film samples were increased with increasing annealing temperatures. Analysis using X-ray photoelectron spectroscopy showed the formation of the InBiS3 structure for the obtained films, which is also confirmed by the XRD results. The optical absorption coefficient value of the annealed samples was found to be in the order of 10 5 cm-1 in the visible region of the solar spectrum. The optical band gap energy and electrical resistivity of the fabricated samples were observed to decrease (from 2.2 to 1.3 eV, and from 0.3 to 0.01 -cm, respectively) with increasing annealing temperatures (from 200 to 350°C), indicating the suitability of the prepared InBiS3 thin films for solar cell applications.

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Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

Cited by 7 publications

References 29 publications

A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin‐Film Material for Next Generation Solar Technology

A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin‐Film Material for Next Generation Solar Technology

Development of chitosan base PbBiS2 thin films for photovoltaic application

Crystallized InBiS3 thin films with enhanced optoelectronic properties

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