Synthesis and Characterization of Copper-Zinc-Tin-Sulfide (CZTS) Thin Film Absorber Layer for Solar Cell Application

Islam, Shariful; Rahaman, Md. Mizanur; Gafur, M. A.; Hossain, Md. Kamal; Ahmed, Farid; Hossain, Md. Abul

doi:10.17265/2161-6213/2018.9-10.004

JMSE-A

2018

DOI: 10.17265/2161-6213/2018.9-10.004

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Synthesis and Characterization of Copper-Zinc-Tin-Sulfide (CZTS) Thin Film Absorber Layer for Solar Cell Application

Shariful Islam¹,

Md. Mizanur Rahaman²,

M. A. Gafur³

et al.

Abstract: Copper zinc tin sulfide (CZTS) thin film was synthesized on soda lime glass substrate by using spin coating method. The synthesized CZTS thin film showed maximum absorption coefficient of 0.193 × 10 4 cm-1 and maximum extinction coefficient of 0.011. The direct optical band gap, Urbach energy and steepness parameter of the synthesized CZTS thin film were 1.52 eV, 0.52 eV and 0.05 respectively. The CZTS thin film was found to be polycrystalline tetragonal in nature. The scanning electron microscopy (SEM) reveal… Show more

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“…The linear increase in the Urbach energy as photon energy increases are due to the increase in the crystallinity and the thickness of the deposited films as the flow rate increases [38,39].…”

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confidence: 99%

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

et al. 2023

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In this work, copper zinc sulfide (CZS) ternary thin films were prepared from the pyrolysis of a Bis-(morpholinodithiato-s,s’)-Cu-Zn precursor using metal-organic chemical vapor deposition technique maintained at 450 ℃ in ambient nitrogen as the carrier gas. The deposition flow rate was varied to study its effect on the optoelectronic properties of CZS films. The particle-induced X-ray emission technique (PIXE) of the prepared single solid source precursor shows the presence of copper, zinc, and sulfur. The Fourier transform infrared spectrophotometer of the precursor reveals the metal-metal bond attachment to the ligand at a very low wavenumber. The XRD spectra reveal the formation of the hexagonal closed-packed structure of CZS films with a preferred orientation along the [111] direction. The film crystallite size is found to increase from 10.4 to 12.2 nm as the flow rate increases, while the dislocation density and stress decrease as the deposition flow rate increases. The SEM analysis revealed an improvement in the growth rate of the grains as the flow rate increased. The transmittance of the deposited CZS films was found to increase from 58% to 84.2% in the infrared region with an increase in band gap from 3.08 – 3.64 eV as the flow rate increased. The deposited film shows ohmic properties and an increase in conductivity from 0.243 to 0.847 (Ω cm)-1, while the resistivity decreases as the flow rate increases. These observations provide room for the deposited CZS film to serve as a potential material for optoelectronics and window layer solar cell devices.

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Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

et al. 2023

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Influence of Mn doping on electrical properties of TiO₂/Si heterojunction diode

Baturay

Bicer

Gezgi̇n

et al. 2023

Zeitschrift Für Naturforschung A

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In this special work, two types of material, which are undoped and Mn doped TiO2 thin films, have been produced by spin coating technique, and then their structural, morphological and optical properties have been measured at different Mn doping rates. Four different doping ratios, undoped, 1, 3 and 5% Mn doped TiO2 have been both experimentally and theoretically investigated and some significant enhancements have been reported. The results of X-ray diffraction (XRD) such as dislocation density, strain, and crystallite size have indicated that undoped, 1, 3 and 5% Mn doped TiO2 thin films had the phase of anatase at 450 °C. It has been observed that the peak intensity of 3% Mn doped TiO2 films has decreased compared to undoped and 1% Mn doped TiO2 while the peak intensity has increased for 5% Mn doped TiO2. The refractive indices and dielectric coefficients of the undoped and Mn doped TiO2 thin films have also been calculated. The undoped and Mn doped TiO2/p-Si heterojunction diodes has exhibited photosensitive behaviour in the illuminated environment. 1% Mn doped TiO2/p-Si heterojunction diode indicated the highest photocurrent. The electrical parameters of all diodes have been calculated and compared to the conventional J–V and Norde methods. Additionally, 1% Mn doped TiO2/p-Si heterojunction diode has been modelled by using the SCAPS-1D program, and J ph values have also been calculated based on the shallow donor density (N D ). The experimental and theoretical J ph values of this diode were found to be compatible with each other.

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Synthesis and Characterization of Copper-Zinc-Tin-Sulfide (CZTS) Thin Film Absorber Layer for Solar Cell Application

Cited by 2 publications

References 20 publications

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Influence of Mn doping on electrical properties of TiO₂/Si heterojunction diode

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Synthesis and Characterization of Copper-Zinc-Tin-Sulfide (CZTS) Thin Film Absorber Layer for Solar Cell Application

Cited by 2 publications

References 20 publications

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Opto-electronic properties of copper-zinc-sulfide thin films grown via metalorganic-chemical vapor deposition technique at different flow rates

Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode

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Influence of Mn doping on electrical properties of TiO₂/Si heterojunction diode