Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons

Zhang, Huan; Ding, Weiqiang; He, Kai; Li, Ming

doi:10.1007/s11671-010-9635-9

Cited by 103 publications

(64 citation statements)

References 35 publications

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“…This is similar with the Si NW case where Si NW growth could be achieved without the usage of metallic catalyst, when SiO 2 instead of pure Si was used [33] as Si source. Nevertheless, SiC nanoribbons were synthesized by a reaction of silicon vapor and carbon black powder at 1500ºC in Ar atmosphere at atmospheric pressure [34] i.e. without any obvious presence of oxygen although the temperature of reaction was higher than that in VLS experiments and the presence of oxygen in small quantities cannot be excluded.…”

Section: C-sic Nw Growth Based On Vapor-solid (Vs) Mechanismmentioning

confidence: 99%

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

185

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Abstract. SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. Very low diameter (<10 nm) nanowires as well as nanowires free of planar defects have not been demonstrated and these are some of the main challenges. Another issue is the high unintentional doping of the nanowires that does not allow the demonstration of high performance field effect transistors using SiC nanowires as channel material. On the other hand, the grown nanowires are suitable for field emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in the different sections of the present paper.

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Section: C-sic Nw Growth Based On Vapor-solid (Vs) Mechanismmentioning

confidence: 99%

SiC nanowires: material and devices

Zekentes¹,

Rogdakis²

2011

J. Phys. D: Appl. Phys.

185

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“…There are few publications that conducted the synthesization of nanostructured 2H-SiC and most of them carried out other polytypes product mainly 3C-SiC. However, the required synthesizing parameters for 2H-SiC produced were not fully analyzed by Zhang [9]. Complex carbothermal reduction method were employed by Zhu …”

Section: Synthesize Methodsmentioning

confidence: 99%

“…In terms of size, SiC is light weight and normally has low dimensionality so it is commonly available in nano size devices [8]. This type of material achieved high evaluations in terms of mechanical strength [19], hardness [21], thermal stability [15] and conductivity [23], good thermal shock resistance [24] with low thermal expansion coefficient [9] and good wear resistance [21], [23]. Meanwhile, in view of chemical properties, SiC displayed chemical and oxidation resistance due to its inertness [25].…”

Section: Silicon Carbide Properties and Applicationsmentioning

confidence: 99%

“…However, only low dimensionality like zero dimensional (0D), one dimensional (1D), two dimensional (2D) and three dimensional (3D) have taken the interest of researchers to explore. Since the majority of research works related to nanostructure are focusing on 1D [5], the various types of 1D-nanostructure have been established with many synthesization techniques developed from time to time including the sol-gel [12], vapor-liquid-solid [8], vapor-solid [2], laser ablation [6] and chemical vapor deposition (CVD) methods [9]. Among the various types of 1D nanostructure materials available, their specific names were classified based on their unique shapes and sizes such as nanowires, nanorods, nanocables, nanotubes and nanobelts [7], [8].…”

Section: Introductionmentioning

confidence: 99%

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Silicon carbide- from synthesis to application: a review

2017

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Abstract. This paper provides a review of the synthesis techniques that are used to produce nanostructured silicon carbide. The synthesis methods, consisting of carbothermal reduction, chemical vapor deposition, laser ablation, sol-gel and microwave heating are described. The silicon carbide properties and application are also explained. The paper then discusses the limitations of previous studies which involved complicated equipment and processes, that limit their further application and act as a barrier to further research and development in many fields.

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“…With the special geometry shapes and microstructure, the beltlike nanostructures have been the research focus due to their unique physical and chemical properties, such as optical [15,16], electrical [17] and sensor [18,19], field emission [20,21], optoelectronic properties [22][23][24], and so on. Therefore, it is important to obtain the desiring nanobelts with uniform dimensions and sizes and controllable structures for the integration of nanodevices based nanobelt building blocks.…”

mentioning

confidence: 99%

Controlled Growth and Cathodoluminescence Property of ZnS nanobelts with Large Aspect Ratio

Lei

Zheng

et al. 2010

Nano-Micro Lett.

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ZnS nanobelts with large aspect ratio are successfully synthesized on a large scale through thermally evaporating of ZnS powder with a trace of SnO 1,* 2 powder using gold coated Si wafer as the substrate at 1100qC. The results indicate that the as-obtained ZnS nanobelts are about 10 nm in thickness and hundreds of micrometers in length, and the aspect ratio reaches more than 10 4 Keywords: Semiconductor; ZnS; Nanobelts; Cathodoluminescence . Substrate dependent experiments are conducted to better study the growth mechanism of the ZnS nanobelts. Subsequently, optical properties of the as-synthesized ZnS nanobelts are also investigated by using a cathodoluminescence (CL) system, which shows the existence of a strong ultraviolet emission at 342 nm and two poor emission peaks at 522 nm and 683 nm at room temperature, respectively. Herein, we successfully fabricated ZnS nanobelts with large aspect ratio by adjusting the substrate types and the evaporation rate, and studied the CL properties of the as-obtained products.ZnS nanobelts reported here are good candidates for optical and optoelectronic devices.ZnS nanobelts with large aspect ratio were synthesized through a thermal evaporation process in a horizontal tube furnace with Au catalyst on Si substrate. A Si wafer (1 cm in length and 5 mm in width) was placed downstream, which is 20 cm away from the source material. 1 g commercial-grade ZnS powder with 0.2 g SnO 2 was placed in the center of a

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Synthesis and Characterization of Crystalline Silicon Carbide Nanoribbons

Cited by 103 publications

References 35 publications

SiC nanowires: material and devices

SiC nanowires: material and devices

Silicon carbide- from synthesis to application: a review

Controlled Growth and Cathodoluminescence Property of ZnS nanobelts with Large Aspect Ratio

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