Synthesis and Characterization of CuIn1−xGaxSe2 Semiconductor Nanocrystals

Shih, Yu-Tai; Tsai, Yu Lin; Lin, Der-Yuh

doi:10.3390/nano10102066

Cited by 14 publications

(5 citation statements)

References 45 publications

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“…Based on the fact that their XRD spectra do not contain reflexes of CuInSe 2 but instead weak peaks of Se, the 232 cm −1 Raman mode can also be related with Se vibrations [105,106]. The modes at 233 and 260 cm −1 , increasing in intensity with Ga content in CuIn 1−x Ga x Se 2 NCs in [125], were assigned to a B 2 /E mode of the alloy NCs and to the A 1 mode of the Cu 2−x Se impurity phase, respectively. However, no Cu 2−x Se peak is seen in their XRD spectra, and the high intensity of the B 2 /E mode is also unusual (at the green excitation used).…”

Section: Polytypes and Secondary Phasesmentioning

confidence: 99%

Phonon Raman spectroscopy of nanocrystalline multinary chalcogenides as a probe of complex lattice structures

Dzhagan¹,

Litvinchuk²,

Valakh³

et al. 2022

J. Phys.: Condens. Matter

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Ternary (I-III-VI) and quaternary (I-II-IV-VI) metal-chalcogenides like CuInS2 or Cu2ZnSn(S,Se)4 are among the materials currently most intensively investigated for various applications in the area of alternative energy conversion and light-emitting devices. They promise more sustainable and affordable solutions to numerous applications, compared to more developed and well understood II-VI and III-V semiconductors. Potentially superior properties are based on an unprecedented tolerance of these compounds to non-stoichiometric compositions and polymorphism. However, if not properly controlled, these merits lead to undesirable coexistence of different compounds in a single polycrystalline lattice and huge concentrations of point defects, becoming an immense hurdle on the way toward real-life applications. Raman spectroscopy of phonons has become one of the most powerful tools of structural diagnostics and probing physical properties of bulk and microcrystalline I-III-VI and I-II-IV-VI compounds. The recent explosive growth of the number of reports on fabrication and characterisation of nanostructures of these compounds must be pointed out as well as the steady use of Raman spectroscopy for their characterisation. Interpretation of the vibrational spectra of these compound nanocrystals (NCs) and conclusions about their structure can be complicated compared to bulk counterparts because of size and surface effects as well as emergence of new structural polymorphs that are not realizable in the bulk. This review attempts to summarise the present knowledge in the field of I-III-VI and I-II-IV-VI NCs regarding their phonon spectra and capabilities of Raman and IR spectroscopies in the structural characterisations of these promising families of compounds.

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Section: Polytypes and Secondary Phasesmentioning

confidence: 99%

Phonon Raman spectroscopy of nanocrystalline multinary chalcogenides as a probe of complex lattice structures

Dzhagan¹,

Litvinchuk²,

Valakh³

et al. 2022

J. Phys.: Condens. Matter

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“…Where A = G/(G + In) and B = S/(S + Se) are varies from A (0.00 to 0.36) and B (0.00 to 0.40), bowing constant (b) = 0.13 [56], β = 0.94, and the E g = 1.69 eV for CIGS [22], and E g = 1.11 Ev for CIGSe [21].…”

Section: Mathematical Discussionmentioning

confidence: 99%

“…Similarly, the values of CBO and VBO of the ZnO:B/CIGSSe, ZnMgO:Al/CIGSSe, and SnMnO 2 /CIGSSe interface solar cells are calculated according to Eqs. ( 16)- (21).…”

Section: Types Of Deposition Usedmentioning

confidence: 99%

“…The bandgap and electron a nity of the Cu (In 1 − A Ga A ) (S B Se 1 − B ) material is changed with a change in the mole fraction of gallium (G-composition) and sulfur (S-composition) where A = G/(G + In) and B = S/(S + Se). They can be changed by changing the combination of A (0.00 to 0.36) and B (0.00 to 0.40) composition [20][21][22][23]. In addition to the p-type CIGSSe absorber layer material's exceptional optoelectrical capabilities, the buffer, TCO, and HTL layer materials are crucial to modelling the high-e ciency solar cell.…”

Section: Introductionmentioning

confidence: 99%

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The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement

Kumar,

Pushkar

et al. 2023

J Comput Electron

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This paper has simulated two experimental CIGSSe thin-lm solar cells (TFSCs) having a high e ciency of 20% and 22.92%. Later validates the photovoltaics results of both devices based on the experiential values of optoelectronics data. After the simulation, a compelling result was con rmed for both the experimental and simulation solar cells. Finally, different designs have also been proposed. The proposed Type-1 solar cell is designed by the addition of low resistivity, wide energy bandgap (E g ), and minimum absorption coe cient (α) based tin-doped manganese oxide (Sn 1 − x Mn x O 2 ) material in a conventional solar cell instead of ZnO: B and ZnMgO: Al transparent conducting oxides (TCO) layer. Further, by matching the band energy alignment and adjusting the thickness and doping concentration of the TCO, buffer, and absorber layers, the e ciency of the proposed Type-1 TFSC has been increased from 20 to 27.75%. The proposed Type-1 solar cell has some drawbacks, such as the inability to appropriately suppress the photogenerated minority carrier recombination losses due to the absence of a hole transport layer (HTL), and the EQE is relatively lesser than the conventional solar cell. Furthermore, wide band energy and a high 'α' based on cuprous oxide (Cu 2 O) as a HTL are added between the absorber and the back ohmic contact layers in the proposed Type-1 solar cell. Then the structure becomes a proposed Type-2 TFSC.The proposed Type-2 TFSC absorbs more blue light, instantly suppressing the recombination losses and enhancing e ciency (29.01%) and EQE (97%).

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Section: Introductionmentioning

confidence: 99%

The impact of SnMnO2 TCO and Cu2O as an HTL on CIGSSe solar cell performance improvement

Kumar

Priyadarshi

2023

Preprint

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This paper has simulated two experimental CIGSSe thin-film solar cells (TFSCs) having a high efficiency of 20% and 22.92%. Later validates the photovoltaics results of both devices based on the experiential values of optoelectronics data. After the simulation, a compelling result was confirmed for both the experimental and simulation solar cells. Finally, different designs have also been proposed. The proposed Type-1 solar cell is designed by the addition of low resistivity, wide energy bandgap (Eg), and minimum absorption coefficient (α) based tin-doped manganese oxide (Sn1 − xMnxO2) material in a conventional solar cell instead of ZnO: B and ZnMgO: Al transparent conducting oxides (TCO) layer. Further, by matching the band energy alignment and adjusting the thickness and doping concentration of the TCO, buffer, and absorber layers, the efficiency of the proposed Type-1 TFSC has been increased from 20 to 27.75%. The proposed Type-1 solar cell has some drawbacks, such as the inability to appropriately suppress the photogenerated minority carrier recombination losses due to the absence of a hole transport layer (HTL), and the EQE is relatively lesser than the conventional solar cell. Furthermore, wide band energy and a high ‘α’ based on cuprous oxide (Cu2O) as a HTL are added between the absorber and the back ohmic contact layers in the proposed Type-1 solar cell. Then the structure becomes a proposed Type-2 TFSC. The proposed Type-2 TFSC absorbs more blue light, instantly suppressing the recombination losses and enhancing efficiency (29.01%) and EQE (97%).

show abstract

Synthesis and Characterization of CuIn1−xGaxSe2 Semiconductor Nanocrystals

Cited by 14 publications

References 45 publications

Phonon Raman spectroscopy of nanocrystalline multinary chalcogenides as a probe of complex lattice structures

Phonon Raman spectroscopy of nanocrystalline multinary chalcogenides as a probe of complex lattice structures

The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement

The impact of SnMnO2 TCO and Cu2O as an HTL on CIGSSe solar cell performance improvement

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