Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

Abstract

In this work, nickel oxide was fabricated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. All fabricated NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films have an electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.

Effect of annealing time on the structural, morphological, optical and electrical properties of NiS thin films

“…The inter-plans distance (d hkl ) was calculated by Bragg formula [16,17]: X-ray diffraction spectra were exploited to determine the crystallites size D, dislocation density δ and stresses ε in NiS films.…”

Review on NiO thin film as hole transport layer in perovskite solar cell

“…There are many routes for depositing the NiO thin film, including: sol-gel route (Fig. 2) [10,11], direct spin coating from pre-synthesized nanocrystals [12], combustion method [13], electrodeposition [14], sputtering [15], pulsed laser deposition (PLD) [16], atomic layer deposition (ALD) [17], spray pyrolysis [18], chemical precipitation methods [19] and many more have been used for the thin film deposition.…”

Study the Effect of Ni Doping on Structural, Optical and Electrical Properties of Ni1-xAgxO Thin Films Deposited by Spray Pyrolysis Technique

“…NiO thin films have a direct band gap ranging from 3.5 to 4.3 eV [9][10] . Nickel oxide is used as thin layers, which can be deposited in several methods, including molecular beam epitaxy (MBE), electrochemical deposition, pulsed laser deposition (PLD), chemical vapor deposition and spray Sol-Gel methods, spray pyrolysis technique [11][12][13][14][15][16][17] . We used the argent doped NiO thin films to improve the optical and electrical properties of deposited thin films.…”