Synthesis and characterization of gallium thiocarboxylates as novel single-source precursors to gallium sulfide thin films by aerosol-assisted CVD

Shang, Guihua; Hampden‐Smith, Mark J.; Duesler, Eileen N.

doi:10.1039/cc9960001733

Cited by 35 publications

(23 citation statements)

References 15 publications

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“…78 The decomposition of the precursor shows two distinct steps of mass loss. 78 The decomposition of the precursor shows two distinct steps of mass loss.…”

Section: Groups 13 and 16 (Iii-vi) Thin Filmsmentioning

confidence: 99%

Solution based CVD of main group materials

2016

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This critical review focuses on the solution based chemical vapour deposition (CVD) of main group materials with particular emphasis on their current and potential applications. Deposition of thin films of main group materials, such as metal oxides, sulfides and arsenides, have been researched owing to the array of applications which utilise them including solar cells, transparent conducting oxides (TCOs) and window coatings. Solution based CVD processes, such as aerosol-assisted (AA)CVD have been developed due to their scalability and to overcome the requirement of suitably volatile precursors as the technique relies on the solubility rather than volatility of precursors which vastly extends the range of potentially applicable compounds. An introduction into the applications and precursor requirements of main group materials will be presented first followed by a detailed discussion of their deposition reviewed according to this application. The challenges and prospects for further enabling research in terms of emerging main group materials will be discussed.

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“…78 The decomposition of the precursor shows two distinct steps of mass loss. 78 The decomposition of the precursor shows two distinct steps of mass loss.…”

Section: Groups 13 and 16 (Iii-vi) Thin Filmsmentioning

confidence: 99%

Solution based CVD of main group materials

2016

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“…[123,124] Two gallium complexes, Ga(SCOMe) 2 (CH 3 )-(dmp) and Ga(SCOMe) 3 (dmp) (dmp = 3,5-dimethylpyridine), [123] and an indium ionic complex, [Hdmp] + [In (SCOCH 3 ) 4 ] ± , [124] have been employed in aerosol-assisted MOCVD experiments to prepare thin films of the metal sesquisulfides. The respective proposed decomposition pathways for the gallium complexes are shown below.…”

Section: From Dithiocarbonates Monothiocarbamates and Monothiocarbomentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

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“…Their widespread technological applications have captured scientists'a ttention for upcoming challengesa nd demands in the field of infrared optics, photonics, development of next generation computer memories, ande merging applications in medicine or military fields. [3] Thereafter,H ampden-Smith et al also reported the preparation of crystalline a-Ga 2 S 3 films by aerosol-assisted CVD from Ga(S 2 CMe) 2 Me(dmpy) or Ga(S 2 CMe) 3 (dmpy) (dmpy = 3,5-dimethylpyridine) [4] and finally, O'Brien et al described using Ga(S 2 CNMeHex) 3 to deposit a-Ga 2 S 3 films on GaAs(111)s ubstrates by low-pressure CVD [5] and ad ifferent single-source precursor (SSP), [Ga(SiPr) 2 (m-SiPr)] 2 , was used for the preparationo fh igh-quality a-Ga 2 S 3 and g-Ga 2 S 3 films by the CVD method as well. From the mentioned characteristics, the low phonon energy of amorphous chalcogenides resultsi n al ow probability of multiphonon relaxations among the energyl evelso fr are earth ions incorporatedi nc halcogenidebasedm atrix.…”

Section: Introductionmentioning

confidence: 99%

“…[1] The applicationso fa morphous chalcogenides are based on their specific properties such as broad IR transparency (up to 12 and 16 mmf or sulfides and selenides, respectively), photosensitivity,h igh (non)linear refractive indexes, and low phonon energy (approximately 350 cm À1 for sulfidesa nd about 250 cm À1 for selenides). [6] Barron et al have reportedt he synthesis of cubic GaS by using atmosphericp ressure CVD using [(tBu)GaS] 4 as the SSP. Consequently,r adiative efficiencies of most rare earth ions fluorescence emissions in the near-and mid-IR regions are improved.…”

Section: Introductionmentioning

confidence: 99%

Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

Řičica

Světlík

Dostál

et al. 2016

Chemistry A European J

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Our studies have been focused on the synthesis of N→Ga coordinated organogallium sulfides [L Ga(μ-S)] (1) and [L Ga(μ-S)] (2) containing either N,C,N- or C,N-chelating ligands L or L (L is {2,6-(Me NCH ) C H } and L is {2-(Et NCH )-4,6-tBu -C H } ). As the result of the different ligands, compounds 1 and 2 differ mutually in their structure. To change the Ga/S ratio, unusually N→Ga coordinated organogallium tetrasulfide L Ga(κ -S ) (3) was prepared and the unprecedented complex [{2-[CH{(CH ) CH }(μ-OH)]-6-CH NMe }C H ]GaS (4) was also isolated as the minor by-product of the reaction. Compounds 1-3 were further studied as potential single-source precursors for amorphous GaS thin film deposition by spin-coating.

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Synthesis and characterization of gallium thiocarboxylates as novel single-source precursors to gallium sulfide thin films by aerosol-assisted CVD

Abstract: The first example of a structurally characterized gallium thiocarboxylate compound, Ga(SCOMe)zMe(dmpy) 1 (dmpy = 3,5dimethylpyridine), is synthesized and used to deposit high-purity, crystalline gallium sulfide thin films by aerosol-assisted chemical vapour deposition at low temperatures.

Cited by 35 publications

References 15 publications

Solution based CVD of main group materials

Solution based CVD of main group materials

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Intramolecularly Coordinated Gallium Sulfides: Suitable Single Source Precursors for GaS Thin Films

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