Synthesis and characterization of graphene: influence of synthesis variables

Lavin-Lopez, M. P.; Valverde, J.L.; Cuevas, Mauro; Garrido, A.; Sánchez-Silva, L.; Martínez, Paloma Mas; Romero, Amaya

doi:10.1039/c3cp54832e

Cited by 37 publications

(51 citation statements)

References 63 publications

(80 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…• High-speed electron mobility Transistors, lasers, photo detectors [3,22] • Large specific surface area…”

Section: Propertymentioning

confidence: 99%

“…Bottom-Up route comprised those methods, which use a carbonaceous gas source to produce graphene. The most relevant ones are epitaxial growth on Silicon Carbide (SiC) [27] and chemical vapor deposition (CVD) [3]. Top-Down route is based on the attack of graphite (used as raw material) to break its layers forming graphene sheets [28].…”

Section: Graphene Synthesismentioning

confidence: 99%

“…This method is simple and easily scalable [38]. It is important to highlight that the quality and the type of graphene (monolayer, bilayer, few layer, or multilayer) can be varied as a function of the catalytic metal used [3,39,40].…”

Section: Graphene Synthesismentioning

confidence: 99%

“…Nitrogen, a carbon source (such as methane), and hydrogen are flowed through the furnace during the graphene synthesis. Hydrogen catalyzes the reaction produced between the carbon source and the metal substrate resulting in carbon atoms coming from the carbon source decomposition, which are deposited onto the metal surface through chemical absorption [3]. Hydrogen activates the carbon bounds of the metal surface and controls the size and morphology of graphene domains [44].…”

Section: Chemical Vapor Deposition Of Graphene Layersmentioning

confidence: 99%

“…Each atom is bonded by a covalent bond to other three carbon atoms. These carbon atoms are densely packaged in a honeycombshape crystal lattice [3] comprising, in turn, of two superimposed triangular subnets [4]. Although graphene has been known since 1960, it was not until 2004 when Andre Geim and Konstantin Novoselov achieved to obtain an isolated graphene sheet using the Scotch ® tape method [5].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Optimization of the Synthesis Procedures of Graphene and Graphite Oxide

López¹,

Palomino²,

Silva³

et al. 2016

Recent Advances in Graphene Research

View full text Add to dashboard Cite

The optimization of both the chemical vapor deposition (CVD) synthesis method to prepare graphene and the Improved Hummers method to prepare graphite oxide is reported. Copper and nickel were used as catalysts in the CVD-graphene synthesis, CH 4 and H 2 being used as precursor gases. Synthesis variables were optimized according to a thickness value, calculated using a homemade Excel-VBA application. In the case of copper, the maximum thickness value was obtained for those samples synthesized at 1050°C, a CH 4 /H 2 flow rate ratio of 0.07 v/v, a total flow of 60 Nml/min, and a time on stream of 10 min. In the case of nickel, a reaction temperature of 980°C, a CH 4 /H 2 flow rate ratio of 0.07 v/v, a total flow of 80 Nml/min, and a time on stream of 1 min were required to obtain a high thickness value. On the other hand, the Improved Hummers method used in the synthesis of graphite oxide was optimized. The resultant product was similar to that reported in literature in terms of quality and characteristics but both time and cost of the synthesis procedure were considerably decreased.

show abstract

“…• High-speed electron mobility Transistors, lasers, photo detectors [3,22] • Large specific surface area…”

Section: Propertymentioning

confidence: 99%

Section: Graphene Synthesismentioning

confidence: 99%

Section: Graphene Synthesismentioning

confidence: 99%

Section: Chemical Vapor Deposition Of Graphene Layersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Optimization of the Synthesis Procedures of Graphene and Graphite Oxide

López¹,

Palomino²,

Silva³

et al. 2016

Recent Advances in Graphene Research

View full text Add to dashboard Cite

show abstract

Regulating Surficial Catalysis Mechanism of Copper Metal by Manipulating Reactive Intermediate for Growth of Homogenous Bernal‐Stacked Bilayer Graphene

Yang

Yan

et al. 2017

Adv Materials Inter

View full text Add to dashboard Cite

Large scale and homogenous bernal‐stacked bilayer (AB‐stacked) graphene is a promising 2D functional material due to its distinct electronic properties. As motivated by some evidence, the continuous carbon radicals (e.g., ·CH3) can greatly contribute to the nucleation and growth of second layer graphene film; thus, overcoming the self‐limited catalysis regime of metallic Cu surface by conventional chemical vapor deposition. Herein, a two‐step reaction system is designed to facilitate more continuously supplying reactive intermediate for the second layer growth of graphene. With this strategy, monolayer and AB‐stacked bilayer graphene films can be controllably grown by simply tuning the confined amount of predeposited amorphous carbon (α‐C) under atmospheric pressure rather than low pressure or vacuum. This approach opens a straightforward way to grow 2D materials by managing the surficially catalytic kinetics in the two separated reaction units.

show abstract

Characterization of graphene grown on copper foil by chemical vapor deposition (CVD) at ambient pressure conditions

Cazzanelli

Luca

Vuono

et al. 2018

J Raman Spectroscopy

View full text Add to dashboard Cite

In the aim to get high quality graphene films, with large domains and free from impurities, minimizing also the manufacturing costs, we investigate the graphene grown on copper (Cu) foil by chemical vapor deposition at ambient pressure conditions, by using methane (CH4) as carbon source, diluted in a suitable mixture of argon (Ar) and hydrogen (H2). Several graphene samples were synthesized, for variable exposure times to hydrocarbon precursor, in the range from 1 min to 1 hr. The quality of the graphene films and their structural, morphological, and electronic properties were evaluated by micro‐Raman spectroscopy and other techniques, including, scanning tunneling microscopy, atomic force microscopy, and scanning electronic microscopy. In particular, samples obtained with shorter growth time (less than 10 min) exhibit a non‐uniform coverage of the Cu surface, whereas those synthesized with exposure time between 10 and 30 min show a prevalence of well‐ordered monolayer graphene domains. For longer deposition, the amount of disordered domains increases, as revealed by Raman analysis, and the resulting film shows a nonself‐limiting growth behavior for chemical vapor deposition at atmospheric conditions. In addition, we observed 2 kinds of monolayer graphene, in terms of coupling with the Cu surface, for the samples synthesized between 10 and 30 min. To the best of our knowledge, “coupled” and “decoupled” graphene regions have never been reported at the same time on Cu surface. Furthermore, a Raman statistical analysis has been performed on the G and 2D bands measured in both the kinds of regions, gaining evidence of a bimodal behavior for the graphene spots, corresponding to “coupled” and “decoupled” configurations. This difference, which is appreciable also by the optical microscopy inspection, could be related to the local Cu oxidation and to oxygen intercalation after graphene growth.

show abstract

Synthesis and characterization of graphene: influence of synthesis variables

Cited by 37 publications

References 63 publications

Optimization of the Synthesis Procedures of Graphene and Graphite Oxide

Optimization of the Synthesis Procedures of Graphene and Graphite Oxide

Regulating Surficial Catalysis Mechanism of Copper Metal by Manipulating Reactive Intermediate for Growth of Homogenous Bernal‐Stacked Bilayer Graphene

Characterization of graphene grown on copper foil by chemical vapor deposition (CVD) at ambient pressure conditions

Contact Info

Product

Resources

About