Synthesis and characterization of graphene layers prepared by low-pressure chemical vapor deposition using triphenylphosphine as precursor

Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

“…The doped graphene was transferred to SiO 2 (300 nm thick)/Si and quartz substrates for subsequent characterizations using a wet transfer method with poly(methyl methacrylate) (PMMA) as the support film. Details of the sample preparation and transfer can be found elsewhere [24]. The liquid precursor volatizes when exposed to low pressures.…”

Study of Pulse Formation in an EDFL Under a Large Dispersion Variation Hybridly Mode-Locked by Graphene and Nonlinear Polarization Rotation

“…A typical CVD process was used to synthesize the monolayer graphene films on copper foils [64]. Fig.…”

“…In Fig. 2(a), it is shown the Raman spectrum of D (1342 cm -1 ), G (1583 cm -1 ), and 2D (2663 cm -1 ) characteristic bands from the transferred monolayer graphene surface [64], [65]. For analyzing the graphene quality along the fiber surface area, we performed a Raman mapping of the IG/I2D intensity ratio between the G and 2D bands from a 30 µm x 30 µm coverage area on the polished side of the D-shaped optical fiber.…”

“…2(b) by blue color, where the intensity ratio is 0.25 < IG/I2D ≤ 0.5. The other areas are composed of the bilayer (yellow color) and multilayer graphene (red to brown tones), which is characteristic of the CVD graphene growth process [64], [65].…”

Desenvolvimento De Um Sensor De Gás Baseado Em Grafeno CVD

“…O sistema descrito vem sendo usado intensamente na produção de amostras de grafeno de alta qualidade no Laboratório de Revestimentos Protetores e Materiais Nanoestruturados do Departamento de Física da PUC-Rio, usando fontes orgânicas sólidas, líquidas ou gasosas. Isto possibilita ampla flexibilidade na hora de escolha dos parâmetros e substâncias precursoras no processo de deposição, com o objetivo de otimizar características identificadas como favoráveis para a fabricação de grafeno de camada única (82,83).…”