Synthesis and characterization of lead (IV) precursors and their conversion to PZT materials through a CVD process

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

“…They obtained crystalline PbTiO 3 with a bandgap of 3.69 eV, which may be employed for a variety of future technological purposes. [175] Kim et al [176] recently developed a set of lead (IV) precursors with phenyl ligands, such as Ph 4 Pb, Ph 2 Pb(btsa) 2 (btsa = bis(trimethylsilyl)amide), and Ph 2 Pb(thd) 2 , to make ferroelectric Pb(Zr x Ti 1-x )O 3 thin films at 550 or 700 °C on a Si wafer (Figure 14c). Ph 2 Pbthd 2 was chosen because of its increased volatility and stability.…”

“…The PZT thin film deposited at 550 °C, (Figure 14d) showed a surface with very tiny grains, while the thin film prepared at 700 °C was found to be more crystalline (Figure 14e). [176] Another very interesting material that needs to be synthesized as an epitaxial layer on Si substrate is the BaTiO 3 perovskite phase. Reinke et al [52] devised an interesting approach for obtaining epitaxial ferroelectric BT films on Si substrate for integrated metal-oxide-semiconductor (CMOS) manufacturing, which comprised a high vacuum (HV)-CVD approach with low deposition temperatures (400 °C), using Ba( i Pr 3 Cp) 2 , TIP, and water or oxygen as reactants.…”

“…c) Scheme of quasi-single-source Pb/Ti/Zr precursor used for the deposition of PZT films, d,e) SEM and AFM images of PZT thin films made at 550 °C and 700 °C. Adapted with permission [176]. Copyright 2020, Elsevier.…”