Synthesis and characterization of manganese sulphide thin films deposited by spray pyrolysis

Chowdhury, Masud H.; Podder, Jiban; Islam, A. B. M. O.

doi:10.1002/crat.201000549

Cited by 23 publications

(2 citation statements)

References 22 publications

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“…Depending upon the deposition conditions, the structural, electrical ,and optical properties of these materials can be controlled in many ways . Materials containing manganese are interesting because their application is possible in many areas of modern technology such as solar cells as a window/buffer materials, sensors, photoconductors, optical mass memories, solar selective coatings, short wavelengths optoelectronics materials, storage, MnS belong to the family of diluted magnetic semiconductors (DMS) having a wide band gap ( E g =3.1 eV) . Preparation of its thin films has been carried out by different methods such as radio‐frequency sputtering, hydrothermal, molecular beam epitaxy, SILAR, and chemical bath deposition (CBD) .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Sonavane¹,

Jare²,

Shaikh³

et al. 2019

Macromolecular Symposia

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Pure and Pb‐doped MnS thin films are prepared by chemical bath deposition (CBD) method onto glass substrates at 60 °C temperature. The films are characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X‐ray analysis, and optical absorption spectroscopy. The particle size of the crystalline is determined from the XRD patterns using Scherrer formula and is 47 nm for MnS thin films. The particle size shows a change in the case of the Pb‐doped film. The optical band gap of MnS thin film is found to be 3.1 eV, which decreases on doping with Pb. SEM graphs of doping of Pb in MnS confirmed the formation of spherical superstructure and indicate that the Pb2+ is successfully substituted into the MnS host structure of the Mn2+ site.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Sonavane¹,

Jare²,

Shaikh³

et al. 2019

Macromolecular Symposia

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“…During the past few decades by concerning their chemical, physical and structural properties manganese chalcogenides (MnS, MnSe, MnTe, etc.) have attracted current research flow [2]. Among these manganese compounds, MnS belongs to the family of DMS materials containing manganese are interesting because their applications are possible in many areas of modern technology.…”

Section: Introductionmentioning

confidence: 99%

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

Sonavane

Jare

Shaikh

et al. 2019

MSF

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Glass substrates are used to deposit thin films utilizing basic and value effective chemical bath deposition (CBD) technique. The films were prepared from the mixture as solutions of manganous acetate tetrahydrate [C4H6MnO44H2O] as a manganese source, thiourea [(H2 N) 2 CS] as a sulfur source and triethanolamine (TEA) [(HOC2H4)3N] as a complexing agent.In the present paper the deposition was successfully done at 60 °C temperature. The absorption properties and band gap energy were determined employing double beam spectrophotometer. The optical band gap value calculated from absorption spectra of MnS thin film is found to be about 3.1eV.The MnS thin film was structurally characterized by X-ray Diffraction (XRD). The MnS thin film was morphologically characterized by Scanning Electron Microscopy (SEM) and elemental analysis was performed using EDS to confirm the formation of MnS.

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Supercapacitor performance enhancement with the BaS₃:Cu₂S:Mn₂S trichalcogenide semiconductor synthesized via dithiocarbamate precursors

Ahmad,

Jaffri,

Makawana

et al. 2024

Asia-Pacific J Chem Eng

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Due to its potential uses, including e‐vehicles, electrochemical energy storage has attracted a lot of interest from the scientific community and energy stakeholders. With the usage of the novel semiconductor chalcogenide BaS3:Cu2S:Mn2S, which is synthesized by chelating with diethyldithiocarbamate ligand, the current work seeks to enhance the performance of charge‐storage devices. An energy band gap of 2.57 eV was found for this semiconductor, which showed remarkable photoactivity. The chalcogenide that was produced had favorable crystallinity, with an average crystallite size of 26.92 nm and mixed crystalline phases. Additionally, metallic sulfide linkages were identified using infrared spectroscopy, and they were reported to range from 400 to 845 cm−1. Thermal breakdown in two steps was verified using thermogravimetric analysis. Particles with different forms and a rod‐like fusion suggested a higher volume–surface area ratio and many locations. The electrochemical performance of the BaS3:Cu2S:Mn2S was evaluated using a traditional three‐electrode setup with a background electrolyte of 1‐M KOH. BaS3:Cu2S:Mn2S is a great electrode material for energy storage applications, with a specific power density of 10 618 W kg−1 and a specific capacitance of up to 694 F g−1. The same series resistance (Rs) = 0.46 Ω further supported this remarkable electrochemical performance.

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Synthesis and characterization of manganese sulphide thin films deposited by spray pyrolysis

Cited by 23 publications

References 22 publications

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

Supercapacitor performance enhancement with the BaS₃:Cu₂S:Mn₂S trichalcogenide semiconductor synthesized via dithiocarbamate precursors

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Synthesis and characterization of manganese sulphide thin films deposited by spray pyrolysis

Cited by 23 publications

References 22 publications

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Synthesis and Characterization of Pb‐Doped MnS Thin Films

Characterization of MnS Thin Films Deposited by Chemical Bath Deposition

Supercapacitor performance enhancement with the BaS3:Cu2S:Mn2S trichalcogenide semiconductor synthesized via dithiocarbamate precursors

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Product

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Supercapacitor performance enhancement with the BaS₃:Cu₂S:Mn₂S trichalcogenide semiconductor synthesized via dithiocarbamate precursors