Synthesis and Characterization of Manganese Sulphide Thin Films by Chemical Bath Deposition Method

Geetha, G.; Murugasen, Priya; Sagadevan, Suresh

doi:10.12693/aphyspola.132.1221

Cited by 8 publications

(4 citation statements)

References 17 publications

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“…The deposition of CuS takes place through the condensation of Cu and S ions on this initial layer via the ion-by-ion process [33]. In the same way, MnS is deposited [26]. At the bath temperature of 50 °C and/or 60 °C, the amounts of MnS increased and growth along with CuS yielding CuS/MnS composite film with clustered flower-like structure [34,35].…”

Section: Structural Analysismentioning

confidence: 99%

“…Among these techniques, CBD is one of the most suitable methods to get uniform, well adherent, and good reproducibility thin films. Also, this method attracts considerable attention due to its lowtemperature compatibility, large-area deposition with better homogeneity and cost-effectiveness [26]. However, the CBD method brought about good contact between the solution and substrate during the deposition process yielding pinhole free and uniform deposits of films.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and characterization of chemically deposited copper–manganese sulfide thin films

2020

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Highly transparent crystalline CuMnS thin films were deposited on the glass substrate by uncomplicated and low-cost chemical bath deposition (CBD) method at different bath temperatures (50-90 °C). The structural, optical, electrical properties of as-synthesized CuMnS thin films have been investigated. The effect of bath temperature on the structure and morphological properties of CuMnS thin films had determined using XRD, SEM, and EDAX analyses. The prepared thin films at 50 °C and 90 °C consisted entirely of nanocrystalline CuS/MnS composite and CuMnS solid solution, respectively, with hexagonal structure. The results confirm that the crystallite size increased with increasing the bath temperature due to the incorporation of Cu species in the MnS lattice. Copper-manganese sulfide thin films have lesser particle sizes at different bath temperature as shown in SEM images. However, it shows spherical and rod-like structure with little agglomeration. EDAX analysis indicates that the deposited thin films contain Cu, Mn, and S ions without any impurities confirming their purity. UV-Vis-NIR, spectral, and electrical DC measurements were carried out to describe the optical and electrical characteristics of the as-synthesized thin films. UV-Visible spectroscopy shows red shift in the optical band gap with different bath temperatures. The electrical conductivity of different films with increasing the temperature from 298 to 473 K was determined. However, the increment in the bath temperature resulted in an increase in the conductivity of films. This increase could be credited to the film density and shadowing effects. The as-deposited films can be predictable to be useful in sunscreens, solar cells, and electro-optical devices.

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Section: Structural Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of chemically deposited copper–manganese sulfide thin films

2020

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“…Figure 3 is the graph showing the plot of absorption coefficient as a function of wavelength for the deposited thin films. The absorption coefficient (α) was calculated using the formula "as given by [23,24]".…”

Section: Optical Properties Of the As Deposited (Pbmns) Thin Filmsmentioning

confidence: 99%

Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

et al. 2021

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Semiconductor thin films of lead manganese sulphide (PbMnS) have been successfully deposited on florinated tin oxide (FTO) conductive glass substrate using an electrodeposition method. Lead acetate (Pb(CH3COO)2), manganese sulphate (MnSO4.H2O) and thiourea (CH4N2S) were the precursor used for cadmium (Cd2+), manganese (Mn2+) and sulphur (S2-) sources respectively. The concentration of manganese (Mn2+) was varied while keeping the concentrations of Pb2+ and S2- constant at 0.2 M and 0.1 M respectively. The deposited films were annealed at temperature of 250 oC and subjected for optical, electrical, structural and morphological characterizations. The results of the characterizations showed that the deposited thin films of PbMnS have high absorbance, high absorption coefficient throughout VIS and NIR regions. The band gap energy of the films is tuned to the order of 1.9 eV to 2.0 eV and tends to constant as concentration of Mn2+ increased. The electrical properties (electrical resistivity and conductivity) of the films are dependent on the concentration of Mn2+ and film thickness. The range of values of the electrical properties is found to be within the range of values for semiconductor materials. The XRD analysis revealed that the deposited thin films of PbMnS is crystalline but the crystallinity declined with increase in concentration of Mn2+. The SEM morphology showed that the surfaces of the films are highly homogeneous in nature and particle sizes are uniform on the substrate with the majority of the particles been spherical in shape. These observed properties exhibited by the deposited thin films of PbMnS make the films good materials for many optoelectronic and electronic applications such as solar cell, light emitting diode (LED), photodetector etc.

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“…Finally-MnS and γ-MnS has the hexagonal wurtzite structure, based on a slightly compressed (c/a = 1.618) hcp lattice of sulfide anions with manganese cations occupying half of the tetrahedral sites can be grown at low temperature but they easily transform to the more stable α-phase above 200C. The polymorphs have similar but unequal physical properties; for instance, all the three forms of MnS undergo transition to an AFM ordered structure [20], but the transition temperature varies from TN ~80 K for γ-MnS to ~100 K for β-MnS and 154 K for α-MnS [8].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Analysis of the Influence of the Refractive Index on Electromagnetic Wave Propagating through Manganese Sulphide [MnS]

Ugwu¹

2018

NNOA

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The theoretical analysis of the Electromagnetic wave propagation through chemically bath deposited manganese sulphide thin film and optical properties were studied using beam propagation technique in which a scalar wave is propagated through the material thin film deposited on a substrate with the assumption that the refractive index of the medium has homogenous reference refractive index reference term, nref and a perturbed refractive index term, representing the deposited thin film medium is presented in this work. These are substituted into a defined scalar wave equation in which the appropriate Green's Function was defined on it and solved using series solution technique in conjunction with Born approximation method in order to obtain a model equation of wave propagating through the thin film. This was transformed to Voltera equation and used in computing the propagated field for different input regions of the field wavelength such as ultraviolet, visible and infrared region respectively during which the influence of the influence of the refractive index on the propagating wave through the thin film was considered. The results obtained from the computed field were used in turn to compute the band gaps and optical properties of the thin film.

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Synthesis and Characterization of Manganese Sulphide Thin Films by Chemical Bath Deposition Method

Cited by 8 publications

References 17 publications

Fabrication and characterization of chemically deposited copper–manganese sulfide thin films

Fabrication and characterization of chemically deposited copper–manganese sulfide thin films

Study of the Optical, Electrical, Structural and Morphological Properties of Electrodeposited Lead Manganese Sulphide (PbMnS) Thin Film Semiconductors for Possible Device Applications

Theoretical Analysis of the Influence of the Refractive Index on Electromagnetic Wave Propagating through Manganese Sulphide [MnS]

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