Synthesis and characterization of Mo and W compounds containing aminothiolate ligand for disulfide materials

Yeo, So Jeong; Oh, Hyo Jin; You, Tae‐Soo; Jeon, Dong Ju; Chung, Taek‐Mo; Park, Bo Keun; Kim, Chang Gyoun

doi:10.1016/j.poly.2015.07.057

Cited by 4 publications

(5 citation statements)

References 97 publications

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“…The deposition of monolayer and few-layered TMDCs are realized by thermolysis of liquid precursor or chemical vapor deposition (CVD) from the evaporation of elemental sulfur or gas phase precursors such as H 2 S or organic sulfides and solid metal-oxide precursors [6][7][8][9][10]. The deposition from volatile metal-halide or metal-organic precursors with CVD or atomic layer deposition (ALD) techniques were demonstrated by other groups already [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. Those techniques typically show low deposition rates, e.g.…”

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confidence: 99%

Two-dimensional WS₂nanoribbon deposition by conversion of pre-patterned amorphous silicon

Heyne¹,

Marneffe²,

Delabie³

et al. 2016

Nanotechnology

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We present a method for area selective deposition of 2D WS nanoribbons with tunable thickness on a dielectric substrate. The process is based on a complete conversion of a pre-patterned, H-terminated Si layer to metallic W by WF, followed by in situ sulfidation by HS. The reaction process, performed at 450 °C, yields nanoribbons with lateral dimension down to 20 nm and with random basal plane orientation. The thickness of the nanoribbons is accurately controlled by the thickness of the pre-deposited Si layer. Upon rapid thermal annealing at 900 °C under inert gas, the WS basal planes align parallel to the substrate.

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confidence: 99%

Two-dimensional WS₂nanoribbon deposition by conversion of pre-patterned amorphous silicon

Heyne¹,

Marneffe²,

Delabie³

et al. 2016

Nanotechnology

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“…13h-j,14c Previously, we reported Mo and W compounds (Mo (N t Bu) 2 Cl(dmampS), Mo(N t Bu) 2 (dmampS) 2 , Mo(N t Bu) 2 (S t Bu) (dmampS), W(N t Bu) 2 Cl(dmampS), W(N t Bu) 2 (dmampS) 2 , and W(N t Bu) 2 (S t Bu)(dmampS) (dmampS = 1-(dimethylanimo)-2-methylpropane-2-thiolate)) containing the aminothiolate ligand. 16 However, Mo(N t Bu) 2 (S t Bu)(dmampS) is the only one among the Mo compounds that evaporates, while W compounds evaporate at relatively high temperatures (100-130 C). 16 Therefore, our aim was to ascertain strategies to improve the vaporization by converting aminothiolate to thiolate.…”

Section: Introductionmentioning

confidence: 99%

“…16 However, Mo(N t Bu) 2 (S t Bu)(dmampS) is the only one among the Mo compounds that evaporates, while W compounds evaporate at relatively high temperatures (100-130 C). 16 Therefore, our aim was to ascertain strategies to improve the vaporization by converting aminothiolate to thiolate.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Mo and W compounds for disulfide materials

Shin,

Yeo,

Yeo

et al. 2024

Bulletin Korean Chem Soc

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MoS2 and WS2 are spotlighted as fungible materials of graphene that can be used in electronic devices owing to being semiconductors with indirect and direct band gaps. Precursors (Mo(NtBu)2(StBu)2 (1), W(NtBu)2(StBu)2 (2)) suitable for the deposition of these materials were synthesized and characterized. The molecular structures of 1 and 2 exhibit a tetrahedral geometry according to single‐crystal x‐ray crystallography. Thermogravimetric analyses of 1 and 2 showed two‐step weight loss. The residues from each step of 1 were MoS3 and MoS2, and these results were consistent with the subsequent deposition results of 1. We successfully established a PEALD‐MoS2 process using 1 and H2S plasma as the precursor and reactant, respectively, at relatively low temperatures of 150–300 °C without any post‐sulfurization process. A temperature‐dependent selective deposition of MoSx phases was observed with the growth of amorphous MoS3 films (150–200 °C), and crystalline MoS2 films (250–350 °C).

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“…Recently, we have focused on metal sulfide single-source precursors containing aminothiolate ligands, which are substituted with two alkyl groups at the α-carbon of the thiolate group. In particular, we reported molybdenum, tungsten, and germanium compounds bound to the 1-(dimethylamino)-2-methylpropane-2-thiolate (dmampS) ligand. , …”

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confidence: 99%

“…In particular, we reported molybdenum, tungsten, and germanium compounds bound to the 1-(dimethylamino)-2-methylpropane-2-thiolate (dmampS) ligand. 25,26 Herein, we report the synthesis of Sn II (dmampS) 2 (1) and Sn IV (dmampS) 2 Se (2) as single-source precursors of tin chalcogenide materials or thin films, as well as their characterization by spectroscopic methods including singlecrystal X-ray crystallography, thermogravimetric analysis (TGA), and differential thermal analysis (DTA). Moreover, SnS thin films were deposited using 1 through the metal− organic CVD (MOCVD) method.…”

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Tin(II) Aminothiolate and Tin(IV) Aminothiolate Selenide Compounds as Single-Source Precursors for Tin Chalcogenide Materials

et al. 2020

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Tin aminothiolate compounds Sn II (dmampS) 2 (1) and Sn IV (dmampS) 2 Se (2), where dmampS = 1-(dimethylamino)-2-methylpropane-2-thiolate, were synthesized. The molecular structures of 1 and 2 reveal a seesaw and distorted trigonal-bipyramidal geometry, respectively. The 1 H NMR spectrum of 1 shows two types of resonances for the methyl groups of the α-carbon, methyl groups of the amino groups, and methylene groups at room temperature. On the other hand, the 1 H NMR spectrum of 2 exhibits a single resonance for each of these groups. According to variable-temperature 1 H NMR analysis, each of these two types of resonances occurring at relatively low temperatures (under 223 K for 1 and under 333 K for 2) are merged as a single resonance with increasing temperature. By using thermogravimetric and thermal decomposition analyses, the residual materials of compounds 1 and 2 are confirmed to be SnS and SnSSe, respectively. Compound 1 was subjected to a metal−organic chemical vapor deposition process, which allowed for the deposition of a dense and well-faceted orthorhombic phase SnS thin film on a SiO 2 /Si substrate with ∼200 nm thickness.

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Synthesis and characterization of Mo and W compounds containing aminothiolate ligand for disulfide materials

Cited by 4 publications

References 97 publications

Two-dimensional WS₂nanoribbon deposition by conversion of pre-patterned amorphous silicon

Two-dimensional WS₂nanoribbon deposition by conversion of pre-patterned amorphous silicon

Synthesis and characterization of Mo and W compounds for disulfide materials

Tin(II) Aminothiolate and Tin(IV) Aminothiolate Selenide Compounds as Single-Source Precursors for Tin Chalcogenide Materials

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Synthesis and characterization of Mo and W compounds containing aminothiolate ligand for disulfide materials

Cited by 4 publications

References 97 publications

Two-dimensional WS2nanoribbon deposition by conversion of pre-patterned amorphous silicon

Two-dimensional WS2nanoribbon deposition by conversion of pre-patterned amorphous silicon

Synthesis and characterization of Mo and W compounds for disulfide materials

Tin(II) Aminothiolate and Tin(IV) Aminothiolate Selenide Compounds as Single-Source Precursors for Tin Chalcogenide Materials

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Two-dimensional WS₂nanoribbon deposition by conversion of pre-patterned amorphous silicon

Two-dimensional WS₂nanoribbon deposition by conversion of pre-patterned amorphous silicon