“…Our objective is to analyze the electrical characteristics of an Ag/PDI/p-c-Si/Al device through the incorporation of a PDI organic layer between silicon (Si) and silver (Ag), to conduct a comparative investigation between two organic–semiconductor devices, designated as A and B (Ag/PDI/p-c-Si/Al), both containing n -type perylene derivatives. Device A integrates N , N ′-di(cis-9-octadecen-1-yl)perylene-3,4,9,10-tetracarboxylic diimide (O-PDI), characterized by a lengthy aliphatic chain with unsaturation at the C-9 position (oleylamine) positioned at the imide site of perylene, leading to a three-dimensional (3D) configuration . In contrast, Device B incorporates N , N ′-di(octadecyl)perylene-3,4,9,10-tetracarboxylic diimide (OD-PDI), wherein a lengthy aliphatic chain (octadecylamine) resides at the imide site of perylene, resulting in a more planar structure, depicted in Figure .…”