Synthesis and characterization of photoactive material Cu2NiSnS4 thin films

Chihi, Adel; Boujmil, M.F.; Bessaı̈s, B.

doi:10.1007/s10854-018-00607-z

Cited by 23 publications

(7 citation statements)

References 52 publications

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“…In addition, the presence of CNiTS enhances the absorption considerably more than CCoTS, which may be due to the denser coverage of CNiTS of the perovskite surface (Figure 1c). The UV/Vis absorption spectra of CNiTS and CCoTS are shown in Figure 2b, the corresponding Tauc plots are shown in the inset; an E g of 1.47 and 1.31 eV is found for CNiTS and CCoTS respectively, which is in agreement with values reported in literature [31,39,40]. Figure 2a also shows the corresponding PL spectra of the CMTS deposited on top of perovskite.…”

Section: Figure 1ab Shows the Solar Cell Configuration And Energy Band Diagram Of The Cmts-based Pscssupporting

confidence: 87%

Stannite Quaternary Cu2M(M = Ni, Co)SnS4 as Low Cost Inorganic Hole Transport Materials in Perovskite Solar Cells

et al. 2020

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In this study, inorganic stannite quaternary Cu2M(M = Ni, Co)SnS4 (CMTS) is explored as a low-cost, earth abundant, environmentally friendly and chemically stable hole transport material (HTM). CMTS nanoparticles were synthesized via a facile and mild solvothermal method and processed into aggregated nanoparticle inks, which were applied in n-i-p perovskite solar cells (PSCs). The results show that Cu2NiSnS4 (CNiTS) is more promising as an HTM than Cu2CoSnS4 (CCoTS), showing efficient charge injection as evidenced by considerable photoluminescence quenching and lower series resistance from Nyquist plots, as well as higher power conversion efficiency (PCE). Moreover, the perovskite layer coated by the CMTS HTM showed superior environmental stability after 200 h light soaking in 50% relative humidity, while organic HTMs suffer from a severe drop in perovskite absorption. Although the obtained PCEs are modest, this study shows that the cost effective and stable inorganic CMTSs are promising HTMs, which can contribute towards PSC commercialization, if the field can further optimize CMTS energy levels through compositional engineering.

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Section: Figure 1ab Shows the Solar Cell Configuration And Energy Band Diagram Of The Cmts-based Pscssupporting

confidence: 87%

Stannite Quaternary Cu2M(M = Ni, Co)SnS4 as Low Cost Inorganic Hole Transport Materials in Perovskite Solar Cells

et al. 2020

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“…5a and 5b. The variation in the value of the optical energy gap may have been due to the variation in the crystallite size and high density of the local states in the composition of the bands resulting from the heterogeneous stress or unsaturated bonds introduced during the chemical reaction, and this corresponded with the results of other studies [12] .…”

Section: Resultssupporting

confidence: 79%

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2020

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In this study, Cu 2 NiSnS 4 (CNTS) thin films were deposited on glass substrates at different temperatures of 250, 300, 350 400, and 450 ˚C using the chemical pyrolysis technique. The aim of this research was to study the effect of the substrate temperature on the properties of the films. The structural properties of the films were obtained by X-ray diffraction, Raman spectroscopy, and Field Emission Scanning Electron Microscopy (FESEM); the optical properties were determined by the UV-Vis spectroscopy; and the electrical properties were obtained by observing the Hall Effect. The XRD results showed that the CNTS films had a cubic crystalline structure with (111) being the preferred and most common orientation plane. Raman spectroscopy results showed a distinct peak at 336 cm -1 , which indicated a CNTS quaternary compound. The FESEM results demonstrated the presence of nanoparticles with various shapes and sizes. The optical energy band gap was proven to have a value of 1.57-1.82 eV, for the allowed direct transition, and a high absorption coefficient (≥10 4 cm -1 ) in the visible spectrum region, thereby indicating the potential application of these thin films in solar cells. The Hall Effect measurement on the CNTS thin films indicated a p-type of conductivity for all films, with the highest charge carrier density and mobility occurring at 350  C, which makes them ideal for use in photovoltaic applications.

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“…Raman measurements was used for the analyse various samples, we have seen from Figure 2 one Raman peak at 332 cm -1 showed for the samples dip-coated at 4 and 6 cycles is identified for cubic CNTS structure agreeing to results reported in the literatures [31]. 3.…”

Section: Structural Propertiessupporting

confidence: 86%

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

Ziti

Hartiti

Belafhaili

et al. 2021

J Mater Sci: Mater Electron

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Quaternary semiconductor Cu 2 NiSnS 4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu 2 NiSnS 4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented.Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm -1 . EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 10 4 cm -1 , Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω. cm) −1 . These characteristics are suitable for solar cells applications.

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Synthesis and characterization of photoactive material Cu2NiSnS4 thin films

Cited by 23 publications

References 52 publications

Stannite Quaternary Cu2M(M = Ni, Co)SnS4 as Low Cost Inorganic Hole Transport Materials in Perovskite Solar Cells

Stannite Quaternary Cu2M(M = Ni, Co)SnS4 as Low Cost Inorganic Hole Transport Materials in Perovskite Solar Cells

Untitled

Effect of dip-coating cycle on some physical properties of Cu2NiSnS4 thin films for photovoltaic applications

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