Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique

Qamar, Afzaal; Mahmood, Asif; Sarwar, Tuba; Ahmed, Nadeem

doi:10.1016/j.apsusc.2011.03.033

Cited by 22 publications

(9 citation statements)

References 16 publications

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“…A large number of publications have already been reported on the determination of the optical constants of different polytypes of SiC. [25][26][27][28][29][30][31] Kildemo 26 has done an exhaustive study on the optical properties of bulk SiC polytypes in the spectral range of 300-1100 nm and concluded that the dielectric function is strongly influenced by the polytypism. Further, Larruquert et al 27 have probed the optical constants of amorphous SiC thin films by ellipsometry in the spectral range of 190-950 nm without considering the optical stack model, whereas Zollner et al 29 have explored the dielectric properties of the commercially procured hexagonal SiC substrate by ellipsometry in the broad spectral range (188-1722 nm), including surface characteristics in the optical stack model.…”

Section: Introductionmentioning

confidence: 99%

“…Further, Larruquert et al 27 have probed the optical constants of amorphous SiC thin films by ellipsometry in the spectral range of 190-950 nm without considering the optical stack model, whereas Zollner et al 29 have explored the dielectric properties of the commercially procured hexagonal SiC substrate by ellipsometry in the broad spectral range (188-1722 nm), including surface characteristics in the optical stack model. Recently, Qamar et al 25 have studied the temperature (850-950 C) dependent optical dispersion behavior of sputtered 8H-SiC films in the spectral range of 350-900 nm. Hence, on the basis of available literature, we have concluded that there are still several key challenges such as polytypism, crystallinity, phase purity, surface characteristics, and broad spectral range pertaining to the investigation of the optical properties of SiC, which is not being addressed in detail.…”

Section: Introductionmentioning

confidence: 99%

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Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

Mourya

Jaiswal

Malik

et al. 2018

Journal of Applied Physics

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In this work, we have reported the in-situ fabrication of nanocrystalline rhombohedral silicon carbide (15R-SiC) thin films by RF-magnetron sputtering at 800 C substrate temperature. The structural and optical properties were investigated for the films grown on four different substrates (ZrO 2 , MgO, SiC, and Si). The contact angle measurement was performed on all the substrates to investigate the role of interfacial surface energy in nucleation and growth of the films. The XRD measurement revealed the growth of (1 0 10) orientation for all the samples and demonstrated better crystallinity on Si substrate, which was further corroborated by the TEM results. The Raman spectroscopy confirmed the growth of rhombohedral phase with 15R polytype. Surface characteristics of the films have been investigated by energy dispersive x-ray spectroscopy, FTIR, and atomic force microscope (AFM) to account for chemical composition, bonding, and root mean square surface roughness (d rms). The optical dispersion behavior of 15R-SiC thin films was examined by variable angle spectroscopic ellipsometry in the wide spectral range (246-1688 nm), including the surface characteristics in the optical model. The non-linear optical parameters (v 3 and n 2) of the samples have been calculated by the Tichy and Ticha relation using a single effective oscillator model of Wemple and Didomenico. Additionally, our optical results provided an alternative way to measure the ratio of carrier concentration to the effective mass (N/m*). These investigated optical parameters allow one to design and fabricate optoelectronic, photonic, and telecommunication devices for deployment in extreme environment.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

Mourya

Jaiswal

Malik

et al. 2018

Journal of Applied Physics

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“…Compared to Si, silicon carbide (SiC), with its large energy band, excellent mechanical properties, and good chemical inertness, is a promising material for applications used in harsh environments. SiC can be found in various polytypes 2H-SiC, 4H-SiC, 6H-SiC, 8H-SiC, and 3C-SiC [5], however, only the 4H-SiC, 6H-SiC, and 3C-SiC are reliable semiconductors in the industry [6]. The advantage of 3C-SiC polytype is that it can be readily grown on commercially available large diameter Si substrates.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Qamar

Tanner

Dao

et al. 2014

IEEE Electron Device Lett.

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The current mechanism and effects of external transverse stress in the [110] orientation on the electrical properties of a single crystal (100) p-3C-SiC/p-Si heterojunction diode are reported for the first time. It has been observed that the current flow in the heterojunction is due to tunneling through the triangular potential barrier formed due to valence band offset between Si and SiC. The applied stress produces small changes in tunneling current when stress is increased from 0 to 308 MPa. The observed increase in current at 0.24 V is 10% at maximum stress of 308 MPa. The increase of tunneling current when applying stress is explained in terms of stress, which alters the out-of-plane effective mass, and the effective tunneling barrier height of holes in top subbands of p-type Si.Index Terms-p-type 3C-SiC/Si heterojunction, tunneling current, strain induced effects.

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“…SiC nanomaterials have been successfully synthesized using a number of methods including decomposition of organic silicon compounds, high temperature reactions between carbon nanotubes and SiO, arc-discharge processes, hot filament chemical vapour deposition and lowtemperature, atmospheric microplasma deposition (Zhou et al 2000;Xu et al 2005;Wang 2007;Qamar et al 2011;Vaghri et al 2011). In addition, these techniques are very complex, slow and harmful because of the use of the highly toxic precursor, silane.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and photoluminescence property of silicon carbide nanowires thin film by HF-PECVD system

et al. 2014

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A sample and scalable synthetic strategy was developed for the fabrication of nanocrystalline SiC (nc-SiC) thin film. Thin sheet of nanocrystalline diamond was deposited on Si substrate by hot filamentassisted plasma-enhanced chemical vapour deposition system (HF-PECVD). Further, the resulting carbonbased sheet was heated at 1200 °C to allow a solid state reaction between C and Si substrate to form the SiC thin films. The synthesized films mainly consist of β-SiC nanowires with diameters of about 50 nm and tens of micrometers long. The nanowires axes lie along the [1 1 1] direction and possess a high density of planar defects. The β-SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of 400 nm, which is significantly shifted to the blue compared with the reported PL results of SiC materials. The blue shift may be ascribed to morphology, quantum size confinement effects of the nanomaterials and abundant structure defects that existed in the nanowires.

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Synthesis and characterization of porous crystalline SiC thin films prepared by radio frequency reactive magnetron sputtering technique

Cited by 22 publications

References 16 publications

Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

Structural and optical characteristics of in-situ sputtered highly oriented 15R-SiC thin films on different substrates

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Synthesis and photoluminescence property of silicon carbide nanowires thin film by HF-PECVD system

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