Synthesis and Characterization of Silicon Carbide in the Application of High Temperature Solar Surface Receptors

Ceballos-Mendivil, L.G.; Cabanillas-López, Rafael Enrique; Tánori-Córdova, Judith; Murrieta-Yescas, R.; Zavala-Rivera, Paul; Castorena-González, J.H.

doi:10.1016/j.egypro.2014.10.207

Cited by 11 publications

(8 citation statements)

References 21 publications

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“…The XRD and FTIR results showed that the products mainly consisted of β‐SiC and a small amount of amorphous SiO 2 , and the above mentioned results were enough to interpret that zero‐valent iron was bound to the surface of SiC nanoparticles. These results could be confirmed by the XRD peaks of SiC and ZVI reported in some literature …”

Section: Resultssupporting

confidence: 89%

Zero valent iron loaded on SiC nanoparticles as a new adsorbent for removing Pb (lead) and azo dyes from aqueous solution

Lemraski

Tahmasebi

2017

Env Prog and Sustain Energy

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A reusable silicon carbide nanoparticle supported by nano zero‐valent iron (nZVI) is prepared by a simple precipitation method. The results of thermal gravimetric analysis (TGA), dynamic light scattering (DLS), vibrating‐sample magnetometer (VSM), Fourier transform infrared spectroscopy (FT‐IR), transmission electron microscopy (TEM), scanning electron microscopy with X‐ray microanalysis (SEM‐EDS), X‐ray powder diffraction, and N2 adsorption isotherms indicated that the zero‐valent iron was successfully deposited onto the silicon carbide surface. An investigation into the adsorption ability of this material showed that the SiC nano particle coated with nZVI was expected to form a more active nano composite with higher efficiency for the removal of Pb2+ ions from an aqueous solution. Such findings suggest strong practical applications of modified silicon carbide nano particles with other nano particles as new adsorbents, sensors, as well as for drug delivery and catalysis due to their proper pore sizes, high‐specific areas, and high mechanical and chemical stabilities. © 2017 American Institute of Chemical Engineers Environ Prog, 37: 1657–1667, 2018

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Section: Resultssupporting

confidence: 89%

Zero valent iron loaded on SiC nanoparticles as a new adsorbent for removing Pb (lead) and azo dyes from aqueous solution

Lemraski

Tahmasebi

2017

Env Prog and Sustain Energy

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“…Peaks corresponding to both α-SiC (JCPDS card number 00-029-1128) and β-SiC (JCPDS card number 75-0254) were observed. 34,35 The strong and sharp peaks showed that the SiC phases were well crystallized. The small peak at 2θ = 33.754 • in PIP/CVI-based sample can be attributed to the stacking fault within the CVD-grown β-SiC nanowires.…”

Section: Resultsmentioning

confidence: 99%

“…This aspect can be effectively utilized for catalyst support, solar receptors, and filtration applications. [34][35][36] Figure 7 shows the XRD of the powdered samples of SiC foam (PIP) and SiC foam (PIP/CVI). The XRD pattern of the PIP-based SiC foam confirmed the complete conversion of PF + Si to β-SiC since no peaks corresponding to Si were observed.…”

Section: Resultsmentioning

confidence: 99%

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In situ growth of SiC wires on CVI densification of SiC foam

Sreeja

Shyin

Suchithra

et al. 2023

Int J Applied Ceramic Tech

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Silicon carbide (SiC) foam prepared by polymer infiltration and pyrolysis (PIP) process was further densified with β‐SiC by chemical vapor infiltration (CVI) technique. Scanning electron microscopy and high‐resolution transmission electron microscopy images confirmed the presence of highly entangled and branched in situ grown SiC wires of uniform diameter (∼500 nm) over the struts of open‐cell SiC foam. A uniform rate increase in diameter from nanometer to micron range (∼11 μm) was observed with an increase in the CVI reaction period. X‐ray diffraction results showed the formation of highly crystalline β‐SiC structure along the <111> direction with stacking faults. The formation of SiC wires was explained by the vapor–liquid–solid mechanism and evenness of the surface and uniform growth rate of SiC confirmed the homogeneous concentration of gaseous species during CVI reaction. The compressive strength increased with relative density, with maximum values of 5.5 ± 1.26 MPa for ultimate SiC foam (ρ = 400 kg/m3) prepared by hybrid PIP/CVI technique. The thermo‐oxidative stability of the resultant foam was evaluated up to 1650°C under air and shows excellent thermal stability compared to SiC foam prepared by PIP route. The densified SiC foam can find potential applications in the field of hot gas filters, catalyst supports, microwave absorption properties, and heat insulation for high‐temperature applications.

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“…This produces a very hard and strong material [6]. The most common process to obtain SiC needs high temperatures ranging from 1150 to 1500 0 C, thus requiring high energy [7]. Solvothermal synthesis is a method that utilizes low temperature (600 0 C) to synthesize p-doped and n-doped semiconductor (i.e.…”

Section: Introductionmentioning

confidence: 99%

Potential for photovoltaic cell material by green synthesis of silicon carbide from corn cob through magnesiothermic reduction

Alfonso¹,

Salazar²,

Monserate³

et al. 2020

Int. J. EQ

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Corn cobs can be processed chemically to generate new products for electricity employing a simple, low-cost, and environment friendly method. In this article, silicon carbide (SiC) and activated carbon can be synthesized from corn cobs via sol-gel and a chemical activation method, respectively. SiC was synthesized by reacting the synthesized silica and activated carbon with magnesium powder, which served as catalyst at 600 o C. The SiC was doped with varying amount of Al 2 O 3 (0.01, 0.015, 0.02 and 0.1 g), a p-type dopant, via solvothermal synthesis. The undoped SiC was characterized using Scanning Electron Microscopy with Energy Dispersive X-ray Spectroscopy (SEM-EDX) and Fourier Transform Infrared (FTIR). Then, the band-gap energy and conductivity of undoped SiC and p-doped SiC were determined. SEM-EDX and FTIR analysis confirmed the presence of Si-C bond in the synthesized SiC from corn cob. It was observed that p-doped SiC absorbs higher energy in the visible region than undoped SiC. FTIR analysis confirmed the incorporation of the aluminum in the SiC. UV-vis spectroscopy confirmed that the synthesized p-doped SiC exhibits higher absorbance compared with undoped SiC. Aluminum doping also increased absorption bands on the visible region making it more efficient for potential application in photovoltaic (solar) cells because of the decreased band-gap energy and increase in conductivity of p-doped SiC. The ratio of 1:1-2 (SiC:Al) showed the lowest band-gap and highest conductivity with a value of 1.57-1.58 eV and 0.080-0.082 mS/cm compared with the amount of other p-dopants. Statistically, it was found that the 1:1-2 ratio of SiC:Al can be an effective p-junction for the application in photovoltaic (solar) cells.

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Synthesis and Characterization of Silicon Carbide in the Application of High Temperature Solar Surface Receptors

Cited by 11 publications

References 21 publications

Zero valent iron loaded on SiC nanoparticles as a new adsorbent for removing Pb (lead) and azo dyes from aqueous solution

Zero valent iron loaded on SiC nanoparticles as a new adsorbent for removing Pb (lead) and azo dyes from aqueous solution

In situ growth of SiC wires on CVI densification of SiC foam

Potential for photovoltaic cell material by green synthesis of silicon carbide from corn cob through magnesiothermic reduction

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