Synthesis and characterization of strontium-doped barium titanate thin film by dip and dry technique

Abstract

Thin films of polycrystalline (Ba[Formula: see text]Sr[Formula: see text]TiO3 ([Formula: see text] = 0.2 and 0.3) with Perovskite structure were prepared by a dip and dry technique on a platinum-coated silicon substrate. The good quality thin films with uniform microstructure and thickness were successfully produced by dip-coating techniques annealed at 730[Formula: see text]C for 1 h. The resulting thin film shows a well-developed dense polycrystalline structure with more uniform grain size distribution. The BST thin films were characterized for their structural, Raman spectroscopy, morphological properties, and complex impedance properties. The dielectric constant-frequency curve showed the good dielectric constant and loss dielectric loss with low-frequency dispersion. The BST 0.3 thin film reveals that the dielectric constant and dielectric loss at a frequency of 1 kHz were 578 and 0.02, respectively. The obtained results on dielectric properties can be analyzed in terms of the Maxwell–Wagner model.

Fabrication and Characterization of Graphene-Barium Titanate-Graphene Layered Capacitors by Spin Coating at Low Processing Temperatures

“…Raman spectra for as-grown BMD-BT film on SS and quartz substrate revealed peaks at 245, 305, 513,713 cm −1 which further validate the tetragonal structure of BT material. 30 In Fig. 6d the PCD film did not exhibit characteristic raman bands of BT material even after annealed at 900 °C, presumably the precursor material did not transform to BT material, which corroborating the XRD results discussed above.…”

“…A dielectric substance in a capacitor enhances the capacitance of the capacitor. 30,39 The impedance spectroscopy allowed these materials to be studied in terms of frequency response dielectric & impedance relaxation characteristics. 40 The dielectric constant, capacitance, and dielectric loss of our G-BT-G structure found to be decreased with the increase in frequency (Figs.…”

Optimization of high temperature energy storage properties of PEI‐based composite dielectric based on rapid in‐situ growth of inorganic functional layer

“…But its inherently smaller ε r leads to a relatively lower energy density of the linear dielectric. Inorganic perovskite ceramics typically have a higher dielectric constant ( ε r ~ 10 2 –10 4 ) than polymer dielectrics 22–25 . In order to solve the above problems, researchers expect to improve the dielectric properties of polymer dielectrics by doping the polymer matrix with highly dielectric inorganic fillers 26–29 .…”

“…Inorganic perovskite ceramics typically have a higher dielectric constant (ε r $ 10 2 -10 4 ) than polymer dielectrics. [22][23][24][25] In order to solve the above problems, researchers expect to improve the dielectric properties of polymer dielectrics by doping the polymer matrix with highly dielectric inorganic fillers. [26][27][28][29] However, lower doping content is usually not significant for improvement of dielectric constant, while higher doping content leads to charge accumulation phenomenon, resulting in local electric field distortion, which is detrimental to improvement of energy density.…”