Synthesis and characterization of tin (IV) oxide thin films

Rahayi, M.; Ehsani, M.H.; Nkele, Agnes C.; Shahidi, M. M.; Ezema, Fabian I.

doi:10.1007/s11082-021-02896-x

Cited by 7 publications

(2 citation statements)

References 34 publications

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“…The UV–visible data were used to plot the corresponding Tauc plots, utilizing the equation for direct band-gap systems false( α h ν false) 2 = C ( h ν − E g ) where α, E g , C , and h ν are the absorption coefficient, optical band gap, an energy-independent constant, and the incident photon energy, respectively. , The optical band-gap value of the whole P-FTO series was around 3.75 eV (∼330 nm), and it was a little bit lower than the band-gap value of the CFTO reference, which was found as 3.87 eV (∼320 nm). According to the Tauc plot for P1 (Figure c), its optical band gap was 3.78 eV (∼328 nm), which is higher than the energy of visible light and most of the UV light photons.…”

Section: Resultsmentioning

confidence: 99%

Fluorine-Doped Tin Oxide Thin Films with High Surface Conductance and Low Transparency for Boosting Performance in Dye-Sensitized Solar Cell Applications

Kananke Udubokke Rathnayakage,

Bandara,

Wijayaratne

et al. 2023

ACS Appl. Energy Mater.

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Transparent conductive oxide films, like fluorine-doped tin oxide (FTO), are needed for electrochemical devices. FTO films are attractive due to their cost-effectiveness and high-temperature tolerance. Generally, solar cell fabrication requires high transmittance and low-conductivity FTOs. However, achieving both simultaneously poses a fundamental challenge. This study investigates the impact of FTO layer thickness, sheet resistance, transparency, and film morphology on optimizing the performance of dye-sensitized solar cells. To achieve this, a precursor solution containing SnCl 4 •5H 2 O and NH 4 F in isopropanol is sprayed onto a soda-lime glass substrate at 500 °C to form FTO films. The film thickness is varied by repeating the spray cycles. By increasing the number of spray cycles, the sheet resistance of the FTO film improves to ∼1.20 Ω □ −1 with the expense of transmittance. The achieved very low sheet resistance of ∼1 Ω □ −1 (∼3.54 × 10 −4 ) Ω cm resistivity for the FTO film confirms the promise of this sequential spray pyrolysis technique in preparing highly conductive inert electrodes for various applications. Furthermore, DSCs with low transparency and sheet resistance showed higher-energy conversion efficiencies, challenging the current prerequisite of the requirement of high transmittance. The best efficiency (5.14%) is achieved with FTO films having a 34.2% transmittance and a 3.27 Ω □ −1 sheet resistance, outperforming standard FTO films (4.74%) with a 10 Ω □ −1 sheet resistance and an ∼83% transmittance. The results indicate that the transparency of FTO is not a dominant factor and carefully controlled light scattering and electrical properties in translucent FTO films would lead to the realization of dye-sensitized solar cells that deliver superior efficiency.

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Section: Resultsmentioning

confidence: 99%

Fluorine-Doped Tin Oxide Thin Films with High Surface Conductance and Low Transparency for Boosting Performance in Dye-Sensitized Solar Cell Applications

Kananke Udubokke Rathnayakage,

Bandara,

Wijayaratne

et al. 2023

ACS Appl. Energy Mater.

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“…The absorption coefficient deduced from equation i is as shown in equation ii which is used to obtain the relation between absorption coefficient and photon energy. Using the transmittance spectrum obtained, the energy band gap of the thin film is determined using the Tauc relation given in equation 3 [12].…”

Section: Post-deposition Treatmentmentioning

confidence: 99%

Annealing effect on morphology, surface roughness and structure of thermally evaporated tin oxide thin films

Ibiyemi,

Ilyas,

Lawal

2023

Recent Adv. Nat. Sci

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SnO2 thin films were produced utilizing the Thermal Vacuum Evaporation method on quartz substrates. Three samples—FAA, FV-200, and FA-400—were made and labelled. While samples of the FV-200 and FA-400 were annealed at 200 ◦C and 400 ◦C, respectively, the as deposited thin film is FAA. The root mean square (RMS) roughness, uniformity, and average roughness of the films were all measured using the atomic force microscope. The film was spherical after being annealed at 400 ◦C, covering the substrate more uniformly with erratic growth. The as-deposited film exhibits an uneven distribution of grains of varying sizes. The sample showed consistent grain development after being annealed at 200 ◦C. The root mean square values of samples FAA, FV-200, and FA400 are 42.2 nm, 41.7 nm, and 112.7 nm. The XRD technique was used to the strongest of which could be seen at 2θ = 300, or the (200) plane of Sn metal. The thin film was annealed in vacuum at 200 ◦C and revealed three more peaks, with the strongest peak appearing at 2θ = 30◦, which is consistent with an enhanced structure of Sn metal thin film. The sample annealed at 400 ◦C revealed high surface roughness compare to other samples and its films are clearly defined, spherical, and cover the substrate more evenly. Whereas, a mixture of large and small grains with uneven distribution throughout the substrate and poor film homogeneity was reveal by film without heat treatment.

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Sol–gel processed (ZnxNi1−x)O binary composite characterized for gas sensing and photocatalytic applications

Femi,

More,

Nkele

et al. 2024

J Mater Sci: Mater Electron

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Synthesis and characterization of tin (IV) oxide thin films

Cited by 7 publications

References 34 publications

Fluorine-Doped Tin Oxide Thin Films with High Surface Conductance and Low Transparency for Boosting Performance in Dye-Sensitized Solar Cell Applications

Fluorine-Doped Tin Oxide Thin Films with High Surface Conductance and Low Transparency for Boosting Performance in Dye-Sensitized Solar Cell Applications

Annealing effect on morphology, surface roughness and structure of thermally evaporated tin oxide thin films

Sol–gel processed (ZnxNi1−x)O binary composite characterized for gas sensing and photocatalytic applications

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