“…Recent research trends demonstrate that RRAM (resistive random-access memory) with the simple electrode/active layer/electrode structure [ 4 ] shows excellent data storage performance [ 5 , 6 ] for nanoscale size, high storage density, fast wipe speed, low operating voltage, and excellent cycle stability, among others [ 7 , 8 ]. These devices typically used inorganic materials as active materials, such as oxide [ 9 , 10 , 11 , 12 ], carbides [ 13 , 14 , 15 ], nitrides [ 16 , 17 , 18 ], and so on. Inorganic materials, however, have reached their physical limits.…”