Synthesis and characterization of urea-doped MgZnO nanoparticles for electronic applications

Badi, N.; Khasim, Syed; Pasha, Apsar

doi:10.1007/s00339-019-3149-9

Cited by 6 publications

(1 citation statement)

References 37 publications

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“…But the production of excellent detectors often needs to overcome some existing problems, such as selecting a suitable device substrate, solving lattice mismatches and avoiding poor film quality due to inconsistent molar ratio with metal ions. To solve these problems, it often requires very complex processes and expensive equipment, such as atomic layer deposition, laser molecular beam epitaxy (LMBE), lateral epitaxy overgrowth, metal-organic chemical vapor deposition, pulsed atomic layer epitaxy, pulsed laser deposition, RF magnetron sputtering and reduced area epitaxy [10,[13][14][15][16][17][18]. The detectors made by these methods are not only complex in technology, but also high in cost and energy.…”

Section: Introductionmentioning

confidence: 99%

Broadband ultraviolet photodetector based on rare-earth metal oxide Nd₂O₃

Fang,

Liu,

Zhang

et al. 2024

J. Phys. D: Appl. Phys.

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The detection of ultraviolet (UV) radiation holds significant importance in various fields. As the demand for superior detector performance grows alongside advancements in science and technology, there is a need for detectors with larger light-to-dark rejection ratios and lower standby power consumption. This paper presents the outstanding performance of the rare earth metal oxide Nd2O3 in broadband UV detection. With a wide forbidden band width of 4.6 eV, eliminating the requirement for additional filters, Nd2O3 emerges as an ideal material for broadband UV detectors. The device exhibits remarkable characteristics, including a dark current of only 1.66 × 10−11 A at a 5 V bias voltage, a light-to-dark rejection ratio of 1.33 × 103 at 280 nm and 15 μW cm−2, a responsiveness of 0.061 A W−1, and a detection rate of 4.7 × 1012 Jones. Furthermore, the performance of the device can be significantly enhanced through the formation of a heterojunction with TiO2. The heterojunction device exhibits a shortened response time of 78.64%, a reduced recovery time of 88.97%, and an increased light-to-dark rejection ratio of 2.75 × 103 at a 5 V bias voltage. This significant improvement in performance highlights the potential of the Nd2O3/TiO2 heterojunction in broadband UV detection.

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