2002
DOI: 10.1021/ic020299h
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Synthesis and Characterization of Volatile, Fluorine-Free β-Ketoiminate Lanthanide MOCVD Precursors and Their Implementation in Low-Temperature Growth of Epitaxial CeO2 Buffer Layers for Superconducting Electronics

Abstract: A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric Ce, Nd, Gd, and Er complexes are coordinatively saturated by a versatile, multidentate ether-functionalized beta-ketoiminato ligand series, the melting point and volatility characteristics of which can be tuned by altering the alkyl substituents on the keto, imino, and ether sites of the ligand. Direct comparison with conventional lanthanide beta-d… Show more

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Cited by 60 publications
(35 citation statements)
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“…The use of ketoiminates of group 2 is limited to barium [4] and magnesium [5] derivatives, although a wide range of bketoimines can easily be prepared from b-diketones and various amines [6]. Functional b-ketoimines with either O-or N-donor arms were shown to be able to provide additional donor sites for controlling the nuclearity, and thus the volatility of Ba [4], Ce [7] or Mg [5] species. Monomeric, volatile barium precursors were thus obtained by using appended polyether ÔlariatsÕ NCH 2 CH 2 (OCH 2 CH 2 ) x OR (x = 0-2, R = Me, Et) [4].…”
mentioning
confidence: 99%
“…The use of ketoiminates of group 2 is limited to barium [4] and magnesium [5] derivatives, although a wide range of bketoimines can easily be prepared from b-diketones and various amines [6]. Functional b-ketoimines with either O-or N-donor arms were shown to be able to provide additional donor sites for controlling the nuclearity, and thus the volatility of Ba [4], Ce [7] or Mg [5] species. Monomeric, volatile barium precursors were thus obtained by using appended polyether ÔlariatsÕ NCH 2 CH 2 (OCH 2 CH 2 ) x OR (x = 0-2, R = Me, Et) [4].…”
mentioning
confidence: 99%
“…There are various growth methods for TC materials, including metalorganic chemical vapor deposition (MOCVD), ion-assisted deposition (IAD), pulsed laser deposition (PLD) and sputtering [13][14][15][16][17][18][19][20][21][22]. Table 15.2 shows a few of the TCs of interest, such …”
Section: Materials For the Tcs And Their Requirementsmentioning
confidence: 99%
“…deposition (MOCVD) for the growth of thin films. This is because of their easy accessibility of ligands synthesis, inexpensive, ready availability of the starting material, and controllable of steric and electronic effects [1][2][3][4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%