Synthesis and characterization of ZnO thin films deposited via PE-MOCVD

Seomoon, Kyu; Lee, Jongin; Jang, Pyungwoo; Jung, Chi-Sup; Kim, Kwang‐Ho

doi:10.1016/j.cap.2011.01.049

Cited by 13 publications

(8 citation statements)

References 8 publications

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“…From 400 to 550 °C, the growth rate of stacked thin films strongly increases from 0.4 to 1.9 nm/s, indicating the occurrence of a surface reaction-limited growth regime. By fitting the experimental data with an Arrhenius plot, an activation energy around 40 kJ/mol was deduced from the slope of the linear part, which is similar to the value of 38.4 kJ/mol reported in Ref 32. .…”

supporting

confidence: 79%

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Bui

Ardila

Sarigiannidou

et al. 2020

ACS Appl. Mater. Interfaces

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ZnO thin films and nanostructures have received over the last decade an increasing interest in the field of piezoelectricity, but their formation mechanisms on silicon when using pulsed-liquid injection metalorganic chemical vapor deposition (PLI-MOCVD) are still open to a large extent. Also, the effects of their morphology, dimensions, polarity and electrical properties on their piezoelectric properties have not been completely decoupled yet. By only tuning the growth temperature from 400 to 750 °C while

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supporting

confidence: 79%

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Bui

Ardila

Sarigiannidou

et al. 2020

ACS Appl. Mater. Interfaces

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“…The other orientations such as (0 0 2), and (1 1 0) are also present (a) (b) Figure 6 SEM images of the ZnO nanostructure (a) partial gas pressure ratio of hydrogen and argon is (5:2), (b) partial gas pressure ratio of hydrogen and argon is (3:1). but with relatively low intensities which indicate that samples S 1 , S 2 , and S 3 are composed of pure ZnO nanorods as agreed with other studies (Kang et al, 2009;Fan, 2009;Seomoon et al, 2011). The sharp diffraction peaks confirm the high crystallinity of the synthesized nanoparticles.…”

Section: Resultssupporting

confidence: 92%

ZnO nanostructures induced by microwave plasma

Elsayed

Anad

AbdelFattah

et al. 2015

Arabian Journal of Chemistry

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Microwave induced hydrogen plasma is used to fabricate ZnO thin films at low ambient gas pressure and controlled oxygen content in the gas mixture. The emission spectra have been observed. Optical emission spectroscopy was used to identify the chemical reaction mechanism. Structural quality of the so-obtained nanoparticles was studied by X-ray diffraction (XRD) and high resolution scanning electron microscopy (SEM). SEM results showed that nanorods were formed in the process, and XRD results along with nanorod dimensions obtained from SEM are consistent with the formation of single and poly-crystalline ZnO nanorods. The alignment of these nanorods with respect to the substrates depends on the lattice mismatch between ZnO and the glass substrate. The minimum crystallite grain size as obtained from the SEM measurements was $24 nm and the average diameter is 70 nm with a length of 1-2 lm. The deposited ZnO thin films have a wide energy band gap that equals $3 eV. ª 2014 The Authors. Production and hosting by Elsevier B.V. on behalf of King Saud University. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).

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“…In Figure 4, an increasing tail is observed for < 400 nm when Ar increases. Similar tails in the transmittance spectra of ZnO films have been observed previously [6,24,25]. These tails have been correlated with poor crystallinity of films [26].…”

Section: Resultssupporting

confidence: 82%

“…ZnO thin films have been obtained by techniques such as sol-gel [3,4], metal organic chemical vapor deposition [5,6], pulsed laser deposition [7,8], and sputtering [9,10]. As compared to other deposition methods, sputtering has several advantages.…”

Section: Introductionmentioning

confidence: 99%

Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

Acosta

Riech

Martín-Tovar

2013

Advances in Condensed Matter Physics

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Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.

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Synthesis and characterization of ZnO thin films deposited via PE-MOCVD

Cited by 13 publications

References 8 publications

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

Morphology Transition of ZnO from Thin Film to Nanowires on Silicon and its Correlated Enhanced Zinc Polarity Uniformity and Piezoelectric Responses

ZnO nanostructures induced by microwave plasma

Effects of the Argon Pressure on the Optical Band Gap of Zinc Oxide Thin Films Grown by Nonreactive RF Sputtering

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