Synthesis and Characterization of ZnS/PbS Quantum Dots Nanorods Array Heterostructure

Assfour, Bassem; Abadllah, B.; Kakhia, M.

doi:10.1007/s41810-022-00137-6

Cited by 4 publications

(5 citation statements)

References 41 publications

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“…These values were in accordance with recent work [31] which was about 3.51x10 16 cm -3 for ZnO/Si structures deposited by RF magnetron sputtering [45]. Similarly, Nd established 27.7×10 16 at 100 KHz and 194.8×10 16 at 1 MHz for ZnO/AlN/Si, the difference in Nd values were due to change of the interface as well as the lowest crystalline quality (more defects).…”

Section: Electrical Study 351 C-v Studysupporting

confidence: 91%

“…Table 1 shows the concentration of ionized donors Nd (the depleted region) for two ZnO films deposited on two substrates. Nd was deduced from scheming 1/C 2 versus V yields d(C -2 ) =dV from the slope of the curves in the linear part, which Nd was 11.8×10 16 at 100 KHz and 19.6×10 16 at 1 MHz for ZnO/Si, which this film has the best quality. These values were in accordance with recent work [31] which was about 3.51x10 16 cm -3 for ZnO/Si structures deposited by RF magnetron sputtering [45].…”

Section: Electrical Study 351 C-v Studymentioning

confidence: 99%

“…Later, the nanostructures could play a significant role in material science field. ZnO films were considered as promising candidates to be used in devices of energy storage due to their unique electronic and structural properties [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…Also, morphology of the deposited film could be effected by substrate type [23], its quality [24], and its nature using several deposition methods, such as thermal evaporation [25,26], electron gun evaporation [27], DC [28] or RF sputtering [29] and arc discharge. The doping of the film and substrates etching can affect the crystal structure and surface morphology of the deposited films [16]. So, the mention points are treated in the present work for the deposited ZnO film on Si and AlN/Si film using magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

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Study of Zinc Oxide Films Growth on Aluminum Nitride and Silicon Substrates: Structural, Optical and Electrical Properties

Abdallah,

Zetoun,

Masloub

2023

SSP

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ZnO films were deposited by magnetron sputtering using RF power supply, in order to study the effect of substrates on quality of the prepared films. Then, growth of the ZnO films on thin AlN buffer layer and Si(100) substrates were characterized using different techniques. The surface morphology was investigated by means of scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The structural properties were investigated via X-ray diffraction (XRD) patterns, Rocking Curve as well as Pole figures. The ZnO films were textured and they had preferred orientation (002) and the crystallinity was better for ZnO/Si in the used growth conditions. The XRD results were confirmed by HRTEM. Optical properties were analyzed by photoluminescence (PL), as well as electrical characteristics were performed by C-V and I-V measurements. The dispersion orientation of these films, as indicated via the FWHM (rocking curves), is small for thin ZnO/Si. These results are considered as hopeful for piezoelectric applications.

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Section: Electrical Study 351 C-v Studysupporting

confidence: 91%

Section: Electrical Study 351 C-v Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Study of Zinc Oxide Films Growth on Aluminum Nitride and Silicon Substrates: Structural, Optical and Electrical Properties

Abdallah,

Zetoun,

Masloub

2023

SSP

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“…The electrical properties are related with the crystallography quality (grain size and orientation) [9]. These ZnO and/or ZnS Nanostructures allow to potential optical application in optoelectronic field [10,11].…”

mentioning

confidence: 99%

Structural and Morphological Study of PbS:ZnO Nanowires Films Deposited Using Thermal Evaporation Method

Abdallah

Kakhia

Zetoun

2022

Orbital: Electron. J. Chem.

Self Cite

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We obtained ZnO Nanowires films deposited on two types of substrate (Si (100) and glass) with 12 wt % PbS as dopant by simple thermal evaporation technique. High Resolution Transmission Electron Microscopy (HRTEM) and Energy-dispersive X-ray spectroscopy(EDX) images have confirmed the formation of ZnO Nanowires (NWs). EDX technique was used to investigate the elements content (standard analysis and mapping modes). Morphology and thickness of the films were investigated from surface and cross section of the films via Scanning Electron Microscopy (SEM) images. The Raman, photoluminescence (PL) and X-ray Diffraction (XRD) have confirmed the hexagonal phase structure of the ZnO Nanowires, which appeared to be very fine and their diameters were less than 40 nm and their lengths were of several micrometers using SEM and HRTEM. The effect of PbS as dopant on the growth of ZnO Nanowires as well as on the morphology for two substrates was investigated and compared. These Nanowires films could be applied in several fields. Mapping -EDX has confirmed the stoichiometry of prepared films. Finally, the structure (phase) was verified by different characterization techniques. The optoelectronic application of Nanostructures film will be study later.

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Controllable synthesize of ZnS/PbS nanostructure and their structural and morphological properties

Assfour,

Abadllah,

Daoud

et al. 2024

Heliyon

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Synthesis and Characterization of ZnS/PbS Quantum Dots Nanorods Array Heterostructure

Cited by 4 publications

References 41 publications

Study of Zinc Oxide Films Growth on Aluminum Nitride and Silicon Substrates: Structural, Optical and Electrical Properties

Study of Zinc Oxide Films Growth on Aluminum Nitride and Silicon Substrates: Structural, Optical and Electrical Properties

Structural and Morphological Study of PbS:ZnO Nanowires Films Deposited Using Thermal Evaporation Method

Controllable synthesize of ZnS/PbS nanostructure and their structural and morphological properties

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