Synthesis and Characterization of π-SnS Nanoparticles and Corresponding Thin Films

Abstract

Tin sulfide polymorph (π-SnS) nanoparticles exhibit promising optoelectrical characteristics for photovoltaic and hydrogen production performance, mainly because of the possibility of tuning their properties by adjusting the synthesis conditions. This study demonstrates a chemical approach to synthesize π-SnS nanoparticles and the engineering of their properties by altering the Sn precursor concentration (from 0.04 M to 0.20 M). X-ray diffraction and Raman studies confirmed the presence of pure cubic SnS phase nanoparticles with good crystallinity. SEM images indicated the group of cloudy shaped grains, and XPS results confirmed the presence of Sn and S in the synthesized nanoparticles. Optical studies revealed that the estimated energy bandgap values of the as-synthesized π-SnS nanoparticles varied from 1.52 to 1.68 eV. This work highlights the effects of the Sn precursor concentration on the properties of the π-SnS nanoparticles and describes the bandgap engineering process. Optimized π-SnS nanoparticles were used to deposit nanocrystalline π-SnS thin films using the drop-casting technique, and their physical properties were improved by annealing (300 °C for 2 h).

Tunability in the optoelectrical performance of n-SnS(1−x)Sex thin films for photovoltaic applications

“…Basically, SnS exhibits p-type conductivity under Sn-poor conditions, but n-type under Sn-rich conditions. 38 Herein, the deposited TS thin film exhibits n-type semiconductor properties, which may be due to trace Sn compensation which supports the EDX data. The results of the Hall effect measurement for comparison of the electrical properties among TS, TSSe and TSe thin films are displayed through Fig.…”

Silicate as a Versatile Matrix for the Aqueous Synthesis of Metal Sulfide Nanoparticles

“…The band at 312 cm −1 in the Raman spectrum also revealed the presence of the SnS 2 phase [55,58] . However, the existence of this phase was not observed in PXRD; only cubic SnS was identified, Figure S4 red curve, S7 black curve [59–63] . The discrepancy between Raman and PXRD results can be rationalized by involving photochemical oxidation of SnS to SnS 2 and the formation of SnO 2 that occurred under intense laser irradiation when the Raman spectra were measured.…”

“…[55,58] However, the existence of this phase was not observed in PXRD; only cubic SnS was identified, Figure S4 red curve, S7 black curve. [59][60][61][62][63] The discrepancy between Raman and PXRD results can be rationalized by involving photochemical oxidation of SnS to SnS 2 and the formation of SnO 2 that occurred under intense laser irradiation when the Raman spectra were measured. Even though tin sulfide NPs could be synthesized in aqueous medium without silicate, the resulting NPs were heterogeneous and unstable as both the oxidation and aggregation quickly took place.…”

Nanoengineering of Tin Monosulfide (SnS)‐Based Structures for Emerging Applications

“…Narrow bandgap SnS semiconductor nanomaterials, composed of low-cost, earth abundant, and eco-friendly elements, have a strong optical activity in the near-infrared (NIR) and infrared (IR) regions which have great potentials in the field of NIR photodetectors and biomedical applications. [42][43][44] 0D nanoparticles have a size range from 1 to 100 nm, which have received intensive attention in the past two decades in many fields, such as energy storage and conversion, catalysis, optoelectronics, sensors, and biomedicines, due to their quantum effect. [33,34,36] Until now, a number of approaches have been employed to synthesize the 0D SnS nanomaterials with narrow size distribution.…”

“…[33,34,36] Until now, a number of approaches have been employed to synthesize the 0D SnS nanomaterials with narrow size distribution. [31,[42][43][44][45][46][47][47][48][49][50] For example, in 2010, Ning et al [47] reported 0D SnS NPs by a solvothermal method using Sn 6 O 4 (OH) 4 as a Sn source and TAA as a S source. By strictly controlling the molar ratio of Sn to S, the 0D SnS NPs with uniform distribution can be obtained, as shown in Figure 2a.…”