Synthesis and crystal structure of AgInO2

Köhler, Berthold; Jansen, Martin

doi:10.1016/0022-4596(87)90268-4

Cited by 23 publications

(15 citation statements)

References 6 publications

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“…A curious feature of the delafossite structure is that the M-O-M angle is constrained by space group [19,20], and AgInO 2 [21]. Open circles, from left to right, are for CuAlO 2 [9], CuCrO 2 [22], CuGaO 2 [23], CuFeO 2 [19,20], CuScO 2 [24], CuInO 2 [25], CuYO 2 [23], and CuLaO 2 [26].…”

Section: Article In Pressmentioning

confidence: 99%

“…10). For [16], AgCoO 2 [17], AgNiO 2 [17], AgCrO 2 [18], AgGaO 2 [24], AgFeO 2 [19,20], AgRhO 2 [19], AgScO 2 [28] and AgInO 2 [21]. Open circles, from left to right, are for CuAlO 2 [9], CuCoO 2 [19], CuCrO 2 [22], CuGaO 2 [23], CuFeO 2 [19,20], CuRhO 2 [19], CuScO 2 [24], CuInO 2 [25], CuYO 2 [23], CuEuO 2 [26], CuSmO 2 [26], CuNdO 2 [29], CuPrO 2 [26], CuLaO 2 [26].…”

Section: Trends With Temperaturementioning

confidence: 99%

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Trends in negative thermal expansion behavior for AMO2 (A=Cu or Ag; M=Al, Sc, In, or La) compounds with the delafossite structure

Sleight

Jones

et al. 2005

Journal of Solid State Chemistry

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Section: Article In Pressmentioning

confidence: 99%

Section: Trends With Temperaturementioning

confidence: 99%

Trends in negative thermal expansion behavior for AMO2 (A=Cu or Ag; M=Al, Sc, In, or La) compounds with the delafossite structure

Sleight

Jones

et al. 2005

Journal of Solid State Chemistry

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“…We have adopted this approach to calculate the values of V zz and both at the A and the B sites, using the usual lattice sum method. For these calculations, lattice parameters at room temperature were taken from literature [12][13][14][15][16][17][18][19] to obtain the relevant coordinates of the ions. Formal charges of ϩ1, ϩ3, and Ϫ2 were assigned to A, B, and oxygen atoms, respectively.…”

Section: B Comparison With the Pcmmentioning

confidence: 99%

Delafossite oxidesABO2(A=Ag,Cu

et al. 1998

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The electric-field gradient ͑EFG͒ at 111 Cd nuclei dilutely substituting an A cation site in delafossites A ϩ1 B ϩ3 O 2 has been measured using a perturbed-angular-correlation technique. The radioactive isotope 111 Ag(␤ Ϫ ) 111 Cd was used as the hyperfine probe and introduced into the samples by thermal diffusion. The EFG's measured using a 111 Ag → 111 Cd probe are compared with those measured using the 111 In→ 111 Cd probe and with the calculated values using the point-charge model including the local distortion introduced by the probe. The results are also discussed in terms of a previously observed correlation between the electric-field gradient and the cation-oxygen bond length in these delafossites and other binary oxides. ͓S0163-1829͑98͒01329-0͔ PRB 58 R. N. ATTILI et al.

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“…AgInO 2 (AIO) is another I‐III‐VI TCO, showing good conductivity and high transparency, that can be intrinsically doped with p‐ and n‐type electrical conductivity by varying the Ag/In ratio . Reports show that AIO films are amorphous when deposited at temperatures below 773 K but exhibit delafossite‐type crystallinity when annealed above 773 K. A detailed study on the conductivity mechanisms in these films will be helpful to understand how the charge‐carrier mobility can influence the conductivity while maintaining good transmittance. The present study is an attempt to analyse the conductivity mechanisms in amorphous AIO thin films at various temperature regimes to obtain the significant parameters associated with conductivity, along with the elucidation of concentration and mobility of the carriers.…”

Section: Introductionmentioning

confidence: 99%

Electrical and transport properties of nearly stoichiometric transparent n‐type silver indium oxide thin films

Keerthi¹,

Tarachand

Okram

et al. 2016

Physica Status Solidi (b)

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The possibility of combining both optical transparency and high electrical conductivity in the same material makes transparent conducting oxides one of the most sought after materials in transparent electronics. This paper presents the investigations done on the conductivity mechanisms of n-type transparent conducting silver indium oxide thin films in different temperature ranges varying from 6 to 333 K. X-ray diffraction indicates the films to be amorphous, and the morphology of the films from scanning electron microscopy and atomic force microscopy shows agglomerations with average particle size $30 nm. X-ray photoelectron spectroscopy and energy-dispersive analysis of X-rays establish the films to be nearly stoichiometric with In/Ag at.% ratio in the range 1.1-1.2. The transmittance percentage obtained from optical transmittance and absorbance spectra is moderately high and the bandgap energy of the thin films is $3.5 eV. Transport parameters, such as carrier mobility $10 3 cm 2 /V s and carrier concentration $10 18 /cm 3 , are elucidated from Hall and thermopower data.

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Synthesis and crystal structure of AgInO2

Cited by 23 publications

References 6 publications

Trends in negative thermal expansion behavior for AMO2 (A=Cu or Ag; M=Al, Sc, In, or La) compounds with the delafossite structure

Trends in negative thermal expansion behavior for AMO2 (A=Cu or Ag; M=Al, Sc, In, or La) compounds with the delafossite structure

Delafossite oxidesABO2(A=Ag,Cu

Electrical and transport properties of nearly stoichiometric transparent n‐type silver indium oxide thin films

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