Synthesis and dielectric anomalies of CdCu3Ti4O12 ceramics

Zhao, Nan; Liang, Pengfei; Wei, Lingling; Yang, Longhai; Yang, Zupei

doi:10.1016/j.ceramint.2015.03.057

Cited by 36 publications

(17 citation statements)

References 44 publications

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“…Therefore, the lattice expansion will have an influence on the valence of the Co ions. On the other hand, oxygen vacancies can be easily introduced during a high temperature sintering process [48].…”

Section: X-ray Photoelectron Spectroscopy Analysismentioning

confidence: 99%

Synthesis and conductivity properties of Gd0.8Ca0.2BaCo2O5+δ double perovskite by sol–gel combustion

Zhang

Lü

Wei

et al. 2015

J Mater Sci: Mater Electron

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Double perovskite oxides Gd 0.8 Ca 0.2 BaCo 2-O 5?d have been successfully prepared by EDTA-citrate complexation process. The prepared samples were characterized by means of thermogravimetry-differential analysis, X-ray diffraction, Fourier transform infrared spectroscopy techniques. These analyses suggested that pure Gd 0.8 Ca 0.2 BaCo 2 O 5?d phase could be formed when the pH value was maintained above three and calcination temperature was higher than 850°C. The conductivity properties analyzed by means of four probes method, scanning electron microscopy and X-ray photoelectron spectroscopy indicated an improvement in conductivity with a high value of nearly 1200 S/cm, which was due to an increase in the number of small polaron hopping conduction units, Co 3? -O-Co 4? . Interestingly, the Gd 0.8-Ca 0.2 BaCo 2 O 5?d samples exhibited a semiconducting behavior through a wide range of temperature below 100°C and a metallic behavior at 100-500°C, thereby demonstrating that Gd 0.8 Ca 0.2 BaCo 2 O 5?d could meet the requirements of a smart material.

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Section: X-ray Photoelectron Spectroscopy Analysismentioning

confidence: 99%

Synthesis and conductivity properties of Gd0.8Ca0.2BaCo2O5+δ double perovskite by sol–gel combustion

Zhang

Lü

Wei

et al. 2015

J Mater Sci: Mater Electron

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“…Dielectric ceramics with high permittivity and weak temperature-and frequency-dependence have been widely applied in electronics and microelectronics industry such as bypass capacitors and energy-storage devices [1][2][3]. SrTiO 3 (ST) ceramics which have low dielectric loss and weak temperature-and frequencydependent permittivity have received wide attention.…”

Section: Introductionmentioning

confidence: 99%

Structures and dielectric properties of Sr0.9775Sm0.015TiO3 ceramics sintered in N2

Wang

Cao

et al. 2015

Ceramics International

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“…CaCu 3 Ti 4 O 12 is classified as a member of the ACu 3 Ti 4 O 12 family, where A can be Ca, Cd, Bi 2/3 , La 2/3 , Y 2/3 , Na 1/2 Bi 1/2 , Na 1/2 La 1/2 , Na 1/2 Y 1/2 , Na 1/2 Sm 1/2 , or Na 1/3 Ca 1/3 Bi 1/3 . In addition to CCTO ceramics, the colossal dielectric response and electrical properties of related CCTO oxides in the ACu 3 Ti 4 O 12 family have been widely investigated.…”

Section: Introductionmentioning

confidence: 99%

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

et al. 2016

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The dielectric and non‐Ohmic properties of Na1/2Y1/2Cu3Ti4O12 ceramics sintered under various conditions to obtain different microstructures were investigated. Microstructure analysis confirmed the presence of Na, Y, Cu, Ti, and O and these elements were well dispersed in the microstructure. Na1/2Y1/2Cu3Ti4O12 ceramics exhibited non‐Ohmic characteristics with large nonlinear coefficients of about 5.7–6.6 irrespectively of sintering conditions. The breakdown electric field of fine‐grained ceramic with the mean grain size of ≈1.7 μm (≈5600 V/cm) was much larger than those of the course‐grained ceramics with grain sizes of ≈9.5–10.4 μm (≈1850–2180 V/cm). Through optimization of sintering conditions, a low loss tangent of about 0.03 and very high dielectric permittivities of 18 000–23 000 with good temperature stability were successfully accomplished. The electrical responses of the grains and grain boundaries can, respectively, be well described using admittance and impedance spectroscopy analyses based on the brickwork layer model. A possible mechanism for the origin of semiconducting grains is discussed. The colossal dielectric response was reasonably described as closely correlated with the electrically heterogeneous microstructure by means of strong interfacial polarization at the insulating grain‐boundary layers. The non‐Ohmic properties of Na1/2Y1/2Cu3Ti4O12 ceramics were primarily related to their microstructure, i.e., grain size and volume fraction of grain boundaries.

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Synthesis and dielectric anomalies of CdCu3Ti4O12 ceramics

Cited by 36 publications

References 44 publications

Synthesis and conductivity properties of Gd0.8Ca0.2BaCo2O5+δ double perovskite by sol–gel combustion

Synthesis and conductivity properties of Gd0.8Ca0.2BaCo2O5+δ double perovskite by sol–gel combustion

Structures and dielectric properties of Sr0.9775Sm0.015TiO3 ceramics sintered in N2

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics

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Synthesis and dielectric anomalies of CdCu3Ti4O12 ceramics

Cited by 36 publications

References 44 publications

Synthesis and conductivity properties of Gd0.8Ca0.2BaCo2O5+δ double perovskite by sol–gel combustion

Synthesis and conductivity properties of Gd0.8Ca0.2BaCo2O5+δ double perovskite by sol–gel combustion

Structures and dielectric properties of Sr0.9775Sm0.015TiO3 ceramics sintered in N2

Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na1/2Y1/2Cu3Ti4O12 Ceramics

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Non‐Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na_1/2Y_1/2Cu₃Ti₄O₁₂ Ceramics