2018
DOI: 10.1007/s10854-018-8731-y
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Synthesis and dielectric properties of Cr-substituted CeO2 nanoparticles

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Cited by 12 publications
(1 citation statement)
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“…Cerium oxide can be considered a promising candidate to replace conventional silicon oxide gate dielectrics in metal oxide semiconductors and memory devices due to its high dielectric constant, high refractive index and high thermal stability with low leakage current [21][22][23]. In addition, the cubic fluorite structure of the cerium oxide is close to that of the silicon, allowing cerium oxide-based devices to be integrated in silicon-based electronic circuits [24,25].…”
Section: Introductionmentioning
confidence: 99%
“…Cerium oxide can be considered a promising candidate to replace conventional silicon oxide gate dielectrics in metal oxide semiconductors and memory devices due to its high dielectric constant, high refractive index and high thermal stability with low leakage current [21][22][23]. In addition, the cubic fluorite structure of the cerium oxide is close to that of the silicon, allowing cerium oxide-based devices to be integrated in silicon-based electronic circuits [24,25].…”
Section: Introductionmentioning
confidence: 99%