Synthesis and dosimetry features of novel sensitive thermoluminescent phosphor of LiF doped with Mg and Dy impurities

Investigation of thermoluminescence and photoluminescence properties of Tb3+, Eu3+, and Dy3+ doped NaYF4 phosphors for dosimetric applications

“…The initial rise method is grounded on the basis of the assumption that the charge carriers population in the active trap, which is accountable for a specific TL glow peak, is negligible in the initial rise portion of the TL glow curve. 47 The intensity of TL with temperature in the initial segment of the TL glow curve is approximated by the following: I (T) = C exp ( −E / kT )where, C is the constant, I (T) is the TL intensity, T = absolute temperature, E (eV) is the thermal activation energy/trap depth and k is Boltzmann's constant.…”

“…[44][45][46] The structure of the glow curve, such as the shape of the glow peak, glow peak temperature and intensity are substantially affected by certain factors such as the type of lanthanide dopant/impurity content, their concentration, annealing temperature, and the crystallinity of the material. [47][48][49] Therefore, the investigation of the influence of these mentioned parameters as dopants and annealing temperature on the glow curve structure is of particular significance in the research area of developing novel TL dosimetric materials. This contribution is a part of a new effort to explore the NaYF 4 phosphor as a prospective TLD material; therefore, we systematically optimized the NaYF 4 phosphor by using different lanthanide dopants, which were then annealed at different temperatures to obtain the desirable TL glow curve and subsequent dosimetric properties.…”

“…The initial rise method is grounded on the basis of the assumption that the charge carriers population in the active trap, which is accountable for a specific TL glow peak, is negligible in the initial rise portion of the TL glow curve. 47 The intensity of TL with temperature in the initial segment of the TL glow curve is approximated by the following:…”

Investigation of the photoluminescence and novel thermoluminescence dosimetric properties of NaGdF4:Tb3+ phosphors

“…The favorable glow curve structure, TL sensitivity and luminescence efficiency are strongly influenced by the concentration of impurities/dopants and the thermal treatment of the phosphor material. 38 Therefore, the investigation of the dependency of the glow curve structure on the dopants concentration and annealing temperatures is a significant research area in developing and exploring new TL materials. Keeping this point in mind, we conducted the optimization by annealing NaGdF 4 :…”

“…Therefore, it is likely that the presence of Tb 3+ dopant ions increases the number of trapping/luminescent centers in the host system, which results in the realization of thermoluminescence properties in the NaGdF 4 :Tb phosphor system. In general, the kinds of traps/luminescent centers created by g-irradiation are mostly affected by the dopant concentration and annealing temperature; thus, the appropriate dopant concentration and annealing temperature help to maintain the defect equilibrium and stabilization of traps 38 and consequently, the realization of thermoluminescence characteristics. In the present case, NaGdF 4 doped with 3% concentration of Tb 3+ ion annealed at 700 1C rendered the most favorable thermoluminescence properties; thus, we opted for the NaGdF 4 :3% Tb 3+ phosphor annealed at 700 1C for further TL dosimetric characteristics such as dose-response, fading, reproducibility, trapping parameters and activation energy.…”