Synthesis and electrical characterization of Zn₃P₂nanowires

Abstract

Single crystalline Zn 3 P 2 nanowires were synthesized on Si substrates via vapour phase deposition catalysed by In-Au seeds. Single nanowire devices were fabricated and the metal-Zn 3 P 2 nanowire contacts were studied using a model based on two Schottky barriers as a function of temperature. As far we know, these are the first reported values of Schottky barriers of Ti/Zn 3 P 2 nanowire contacts. The obtained values showed no significant dependence on the temperature, indicating that the defects at the nanowire's surfaces did not affect the device characteristics. We found evidence of an acceptor level at 49 meV, also indicating that the dominant transport mechanism is the thermal activation of carriers as is found in the bulk Zn 3 P 2 . It seems that the p-type behaviour is independent of the dimensionality of the Zn 3 P 2 samples and primarily associated with the phosphorous interstitial atoms.

Zn3P2–Zn3As2 Solid Solution Nanowires

“…Zn 3 P 2 and Zn 3 As 2 NWs have proven useful in nanoscale electronic and optoelectronic devices. − Recently, Chen et al reported high-performance field-effect transistors and photodetectors based on Zn 3 As 2 NW . Furthermore, photovoltaic cells have been fabricated using Zn 3 P 2 nanocrystals. , However, only few studies have investigated the compositional tuning of Zn 3 P 2 –Zn 3 As 2 alloy NWs.…”