Synthesis and electrical properties of dense Bi2Al4O9

Larose, Sylvain; Akbar, Sheikh A.

doi:10.1007/s10008-005-0002-1

Cited by 14 publications

(5 citation statements)

References 6 publications

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“…The relatively low electrical conductivity of single phase and dense (91% theoretical density) Bi 2 Al 4 O 9 ceramics was confirmed by Larose and Akbar [3]. These data and the specific crystal structure of the M 2+ -doped phases implies that they may have a strong potential for the use as an electrolyte material in solid oxide fuel cells or for oxygen sensors.…”

Section: +supporting

confidence: 67%

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺)

Burianek

Mühlberg²,

Woll

et al. 2009

Cryst. Res. Technol.

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Pure and homogeneous single crystals of orthorhombic mullite-type Bi 2 M 4 O 9 (M = Al 3+, Ga 3+, Fe 3+), and a mixed Bi 2 Fe 1.7 Ga 2.3 O 9 crystal from an equimolar Ga/Fe composition were grown by the top seeded solution growth (TSSG) method. All these compounds melt incongruently in the range of about 800 and 1100 °C. In case of bismuth gallate and ferrate inclusion-free crystals with dimensions up to several cubic centimeters can be grown. Limited solubility in Bi 2 O 3 and the high steepness of the liquidus curve are the reasons for getting only small imperfect bismuth aluminate crystals. In contrast to ceramic materials preparation reported in literature, divalent calcium and strontium could not be incorporated into the mullite-type structure during the melt growth process. Several fundamental physical properties like heat capacity, thermal expansion, heat conductivity, elastic constants, high-pressure behavior and oxygen diffusivity were determined by different research groups using single-crystalline samples from the as-grown materials. Furthermore, the refractive indices of Bi 2 Ga 4 O 9 were measured in the range of 0.430 and 0.700 μm. Such as many other bismuth containing compounds the refractive indices of Bi 2 Ga 4 O 9 are larger than 2, and Bi 2 Ga 4 O 9 is an optic biaxial positive crystal. Dedicated to Prof. Wolfgang Neumann on the occasion of his 65th birthday

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Section: +supporting

confidence: 67%

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺)

Burianek

Mühlberg²,

Woll

et al. 2009

Cryst. Res. Technol.

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“…optical properties, such as ionic conductivity [4][5][6], piezoelectricity [7] and fluorescence [8][9][10]. In 1937, Sillén performed X-ray diffraction analysis (XRD) on various forms of bismuth trioxide Bi 2 O 3 [11].…”

Section: Phase Diagramsmentioning

confidence: 99%

Phase equilibria investigations and thermodynamic modeling of the system Bi2O3–Al2O3

Oudich

Nugent

Mathieu

et al. 2015

Journal of Nuclear Materials

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“…They found only a low ionic conductivity that ruled out the possibility that the materials could be regarded as intrinsically defective fast ion conductors. The authors 9 explained that the ion conductivity was almost exclusively due to the compensating oxygen vacancies related to impurities. Notably, the corresponding tri-cluster signals were not detected by the 27 Al MAS NMR spectroscopy carried out by Abrahams et al 8 To increase the number of oxygen vacancies in bismuth aluminates Zha et al 11 tried to partially replace bismuth by strontium.…”

Section: Introductionmentioning

confidence: 99%

“…This leads to an Al* position, forming Al 3 O 10 tri-cluster of tetrahedra, which is well-known in mullite-type compounds. 7 Larose and Akbar 9 and Ohmann et al 10 carried out careful investigations on the conductivity of Bi 2 Al 4 O 9 ceramic bodies over wide ranges of temperatures and oxygen partial pressures. They found only a low ionic conductivity that ruled out the possibility that the materials could be regarded as intrinsically defective fast ion conductors.…”

Section: Introductionmentioning

confidence: 99%

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

et al. 2012

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We report on strontium doped dibismuth-nonaoxoaluminate(III) produced at 1023 K. Partial substitution of bismuth by strontium in the structure yields oxygen vacancies for charge balance. Introducing oxygen vacancies rearranged the associated Al 2 O 7 double-tetrahedra forming ''Al 3 O 10 '' tri-clusters which were identified by multi-quantum 27 Al MAS NMR. Both STEM-EDX and XPSshowed homogeneous distribution of strontium in the bulk and on the surface, respectively. Moreover, XPS confirms the valence state of bismuth after doping. The orientations of bismuth 6s 2 lone electron pairs were calculated using DFT methods. The amount of strontium in the crystal structure was further confirmed from the decomposition product SrAl 12 O 19 formed during the temperature-dependent X-ray powder diffraction. The structural proof was carried out by refining the structure of (Bi 0.94 Sr 0.06 ) 2 Al 4 O 8.94 from powder neutron and X-ray diffraction data. Rietveld refinements clearly showed the under occupation of one oxygen site and the shift of two aluminum atoms from the doubletetrahedra to two tri-cluster sites.

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Synthesis and electrical properties of dense Bi2Al4O9

Cited by 14 publications

References 6 publications

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺)

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺)

Phase equilibria investigations and thermodynamic modeling of the system Bi2O3–Al2O3

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

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Synthesis and electrical properties of dense Bi2Al4O9

Cited by 14 publications

References 6 publications

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi2M4O9 (M = Al3+, Ga3+, Fe3+)

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi2M4O9 (M = Al3+, Ga3+, Fe3+)

Phase equilibria investigations and thermodynamic modeling of the system Bi2O3–Al2O3

Strontium doping in mullite-type bismuth aluminate: a vacancy investigation using neutrons, photons and electrons

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Single‐crystal growth and characterization of mullite‐type orthorhombic Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺)

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺)