Synthesis and electrochemical properties of LiNi1−y Zn y O2

Abstract

Zn doped LiNi 1−y Zn y O 2 (0.00≤y≤0.100) composition was synthesized by an emulsion method. The emulsion-derived powder was calcined at the temperature range of 650∼800°C for 12∼48 h. A single phase of LiNi 1−y Zn y O 2 was obtained at 700°C. The optimum condition for the synthesis of LiNi 1−y Zn y O 2 was to be calcined at 750°C for 36 h in oxygen stream. The composition of LiNi 0.995 Zn 0.005 O 2 showed the largest discharge capacity and improved cycle life. The initial and final discharge capacities were 163 and 154.5 mAh/g, respectively. The fading rate in discharge capacity after 20 cycles was only 5.2%.

Non‐ohmic phenomena in Mn‐doped BaTiO3

“…Ceramic samples, such as pure and doped BaTiO 3 , under equilibrium conditions at high temperature, generally show a p ‐type to n ‐type change in behaviour on reducing oxygen partial pressure 13, 14. In the p ‐type region, holes are generated by the idealized reaction: …”

Surface Modification of Over-Lithiated Layered Oxides with PEDOT:PSS Conducting Polymer in Lithium-Ion Batteries

“…The inorganic materials, which include AlF 3 , AlPO 4 4 , and Li-Ni-PO 4 , are known to decrease the irreversible capacity and improve the electrochemical performances of OLO materials owing to the enforcement of stability on the surface in the high-voltage region. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] The carbon materials, including graphene-based materials, are employed to improve the electronic conductivity of OLO cathode materials. 19,[32][33][34] Also, surface modification by conducting polymers, such as polypyrrole, has been recently reported to provide improved electronic conductivity as well as a thin protective layer on OLO cathode materials.…”

Overview of electroceramic materials for oxide semiconductor thin film transistors

“…13). In order to improve leakage current characteristics (i.e., enhancement of breakdown strength, of roomtemperature-grown BST thin films), doping the amorphous BST host with acceptor dopants (i.e., Mn, Ni, and Mg) which partially substitute for Ti on the B site of the A 2+ B 4+ O 2− perovskite structure, has been suggested [134][135][136]. On the basis of the similar ionic radii of Ti 4+ (r eff =0.605 Å) and Mg 2+ (r eff =0.72 Å) in sixfold oxygen coordination, we can assume that Ti 4+ is replaced by Mg 2+ in the BST lattice.…”

“…The valence state of an Mg ion is 2+, thus we can expect further reduction in the leakage current density in Mg-doped BST films compared to BST films doped by acceptors with the higher multi-valence states.. Kang et al [134] suggested the potential suitability of a 3 % Mg-doped BST gate insulator for high field-effect mobility (16.3 cm 2 /V · s) TFTs fabricated on PET substrates. Kim et al [136] reported the successful integration of 1 % Ni-doped BST as a gate dielectric for ZnO TFTs exhibiting a very low operation voltage (4 V), field-effect mobility (2.2 cm 2 /V · s), on/off current ratio (1.2×10 6 ), and subthreshold swing (0.21 V/decade). ZnO TFTs with 3 % Mndoped BST showed a field-effect mobility of 1.0 cm 2 /V · s and a low operating voltage of less than 7 V [135].…”