Synthesis and field-emission properties of novel hierarchical ZnO hexagonal towers

Side by side ZnO/ZnS hetero-junction nanocrystal arrays with superior field emission property

“…Importantly, this value is even lower than that of materials with superior field emission performance, as shown in Table 1. [30][31][32][33] The current density (J) produced by a given electric field (E) is described by the Fowler-Nordheim equation: 34 Fig. 5 (a) A SEM image of the flake-like morphology synthesized under the same growth conditions but without Ge catalysis; (b) the fundamental building block of the ZnO microflake for constructing the HNAs.…”

“…The growth mechanism of the products is ascribed to polarization-induced growth of the ZnO/ZnS HNAs on the microflake surface along the [21 ¯1 ¯0] direction. The ZnO/ZnS HNAs have a ultra-low turn- ZnS-In core-shell heterostructures 9 5.43-5.56 1.6 6 10 3 CNT/TEOS 30 1.76 5607 ZnO-CNT heterostructure array 31 0.4 4.9 6 10 4 Carbon-in-Al 4 C 3 nanowire 11 0.65-1.3 ZnS tetrapod tree-like heterostructures 10 2.66 2600 Oriented SiC nanowires 32 0.7-1.5 Hierarchical ZnO hexagonal towers 33 2.37 2691 ZnO/ZnS HNAs 0.02 5.6 6 10 4…”

Controllable growth of ZnO–ZnSe heterostructures for visible-light photocatalysis

“…Together with the fitting results, there are three peaks centered at 3.25 eV, 2.31 eV, and 2.0 eV, respectively, in the PL spectrum for ZSH1. For ZSH2, the four peaks are located at 3.25 eV, 2.7 eV, 2.31 eV, As is well known, the ultraviolet emission peak at 3.25 eV belongs to the NBE emission of ZnO, 26,27 while the emission at about 2.31 eV is associated with the defect emission of ZnO. 28 The peak at 2.7 eV is ascribed to the NBE emission of ZnSe, 29 while the visible emission bands centered at about 2.0 eV may be mainly attributed to the interfacial transitions between ZnO and ZnSe due to the stock shift (see below in the text).…”

Spontaneous hyper-branching in ZnO nanostructures: morphology dependent electron emission and light detection

“…Accordingly, these interesting ZnO hierarchies represent the main structural units used for the fabrication of several optoelectronic and electronic devices. [17][18][19][20][21][22][23] Amalgamation of the nanoscale building blocks into these complicated complexes is generally attained via oriented aggregation, selfassembly, templating synthesis, sequential seeding and growth etc., where the adopted experimental pathways are hydrothermal, electro-deposition, physical vapor deposition, chemical vapor deposition (CVD), metalorganic CVD, wet chemical etc. [24][25][26][27][28][29][30][31][32] Among these enlisted practices, the low temperature solution processed route is the most suitable for the creation of combinatorial architectures owing to several expedient features such as the nominal thermal budget, straightforward processing, easy fabrication etc.…”