Wide-bandgap semiconductor
indium sesquioxide (In2O3) thin films were grown
on yttria-stabilized-zirconia (YSZ)
substrates with (100), (110), and (111) orientations using a previously
unexplored growth method: low pressure chemical vapor deposition.
High purity metallic indium (In) and oxygen (O2) were used
as precursors, and argon (Ar) was used as the carrier gas. The growth
condition was optimized to balance the precursor vapor pressure and
the suppression of the gas phase reaction to facilitate the growth
of high crystalline quality In2O3 films. The
crystal structures of the as-grown films were determined to be body
centered cubic bixbyite. By tuning the O2 flow rate, In2O3 epitaxial growth rates of 21 μm/h, 11
μm/h, and 9.2 μm/h were obtained for films grown on YSZ
(100), (110), and (111) substrates, respectively. Representative surface
roughness values determined by atomic force microscopy ranges between
0.73 and 10.5 nm. Room temperature electron Hall mobility of 139 cm2/V·s, 77 cm2/V·s, and 97 cm2/V·s for (100), (110), and (111) oriented In2O3 films respectively were obtained with electron concentrations
of (∼1.0–1.3) × 1018 cm–3. Secondary ion mass spectroscopy suggests H as a possible contributor
to the observed free carrier concentrations in the as-grown films.
A room temperature photoluminescence peak was observed at ∼2.16
eV, which is related to the transition involving deep-level defects.
Optical bandgap was determined to be ∼3.35–3.41 eV via
photoluminescence excitation spectroscopy.