Synthesis and growth of GaSe single crystals

Zhu, Chongqiang; Lei, Zuotao; Song, Liangcheng; Ma, Tianhui; Yang, Chunhui

doi:10.1016/j.jcrysgro.2015.02.029

Cited by 12 publications

(4 citation statements)

References 14 publications

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“…Amorphous chalcogenide thin films are typically fabricated by the physical vapor deposition (PVD) methods . For GaE (E=Se, Te) materials, this method was used for synthesis of the hexagonal GaSe thin films, the production of 2D GaSe crystals, monolayers, nanoribbons, or nanosheets . Chemical vapor deposition (CVD) for GaE (E=Se, Te) synthesis is also possible, but the CVD method is strongly influenced by the character of the single source precursors (SSP).…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for Ga_xSe_y Materials

Řičica

Dostál

Růžičková

et al. 2018

Chemistry A European J

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Studies have been focused on the synthesis of N→Ga-coordinated organogallium selenides and tellurides [L Ga(μ-Se)] (1), [L Ga(μ-Se)] (2) and [L Ga(μ-Te)] (3), respectively, containing either N,C,N- or C,N-chelating ligands L (L is {2,6-(Me NCH ) C H } and L is {2-(Et NCH )-4,6-tBu -C H } ) having Ga/E (E=Se or Te) atoms in 1/1 ratio. To change the Ga/E ratio, an unusual N→Ga-coordinated organogallium tetraselenide L Ga(κ -Se ) (4) was prepared. An unprecedented complex (L Ga) (μ-Te )(μ-Te) (5), as the result of the non-stability of 3, was also isolated. Compound 2 is a suitable single-source precursor for the preparation of amorphous GaSe thin films by the spin coating. Moreover, simple heating of an octadecylamine solution of 2 provided, after work up, monoclinic Ga Se crystals with different crystallinity according to conditions used. Therefore, compound 2 may be also used as a source of Ga Se in the low-temperature doping process of Bi Se .

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Section: Introductionmentioning

confidence: 99%

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for Ga_xSe_y Materials

Řičica

Dostál

Růžičková

et al. 2018

Chemistry A European J

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“…Over 300 g high-purity BGSe polycrystalline powder could be obtained in one run by the two temperature-zone synthetic method . High-purity Ba (3 N), Ga (8 N), and Se (6 N) in the stoichiometric ratio of Ba/Ga/Se = 1:4:7 were placed in a long quartz tube.…”

Section: Methodsmentioning

confidence: 97%

“…Over 300 g high-purity BGSe polycrystalline powder could be obtained in one run by the two temperature-zone synthetic method. 28 High-purity Ba (3 N), Ga (8 N), and Se (6 N) in the stoichiometric ratio of Ba/Ga/Se = 1:4:7 were placed in a long quartz tube. The Ba and Ga were put into the PBN crucible in the high temperature zone, and the Se was put at low temperature zone.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Synthesis, Growth of Crack-Free Large-Size BaGa₄Se₇ Crystal, and Annealing Studies

Guo

Lei

et al. 2018

Crystal Growth & Design

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The newly developed IR nonlinear optical (NLO) material BaGa 4 Se 7 (BGSe) has aroused intense research interest owing to its excellent overall properties and outstanding IR laser output performance. In this paper, the growth of high-quality large-size BGSe was investigated. To overcome the difficulty of realizing the large-scale complete reaction among the highly active metal Ba, the liquid metal Ga, and the nonmetal with high vapor pressure Se, a two temperature-zone synthetic technique was developed, and over 300 g BGSe polycrystalline raw material with high purity was synthesized at one time. To avoid the crystal cracking and increase the usage for preparing NLO device, a crystal seed with appropriate orientation was selected for vertical Bridgman technique and high-quality crystals with dimensions up to Φ40 mm × 150 mm were grown successfully. The BGSe crystals exhibit high transmittance over a wide transparent range and the absorption coefficient was estimated around 0.04 cm −1 in the range of 1−13 μm. Moreover, via the two zone thermal annealing under the atmosphere of BGSe powder vapor, the transmittance of BGSe has been significantly improved.

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“…Since the polynary chalcogenides have complicated phase diagram, the stoichiometry deviations, induced in the process of polycrystalline synthesis and single-crystal growth, usually form the precipitates phase of binary compounds and a multiple nucleation growth, , which make it impossible to directional growth. To avoid the crucible exploding induced by the high vapor pressure of S or P component, the traditional two-temperature vapor transport (TTVT) method − adopts large reaction space and lead to significant stoichiometry deviations in the process of polycrystalline synthesis of pnictide or chalcogenide semiconductors. In this work, a new pressure-assisted technique was performed to prepare stoichiometric AGS and AGGS polycrystalline materials.…”

Section: Introductionmentioning

confidence: 99%

Pressure-Assisted Method for the Preparations of High-Quality AaGaS₂ and AgGaGeS₄ Crystals for Mid-Infrared Laser Applications

Huang

Mao

et al. 2018

Inorg. Chem.

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Recently developed chalcogenides nonlinear optical crystals have potential application in mid-to farinfrared laser fields. However, high-quality single crystals are hard to be prepared because of high vapor pressure of sulfur component and decomposition of chalcogenides during the polycrystalline synthesis and single-crystal growth. A pressureassisted technique was performed to prepare stoichiometric AgGaS 2 and AgGaGeS 4 polycrystalline materials. On the basis of the synthesized polycrystalline materials, high-quality AgGaS 2 and AgGaGeS 4 single crystals were successfully obtained using the seed directional Bridgman method with a well-designed crucible-capsule technique. These single crystals possess high homogeneity and low absorption coefficient, making it can be applied in nonlinear optical experiments. The pressure-assisted method can also be suitable to prepare other chalcogenide and phosphide compounds. The method of polycrystalline synthesis and single crystals growth described in this work will be helpful for preparing other chalcogenides nonlinear optical crystals.

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Synthesis and growth of GaSe single crystals

Cited by 12 publications

References 14 publications

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for Ga_xSe_y Materials

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for Ga_xSe_y Materials

Synthesis, Growth of Crack-Free Large-Size BaGa₄Se₇ Crystal, and Annealing Studies

Pressure-Assisted Method for the Preparations of High-Quality AaGaS₂ and AgGaGeS₄ Crystals for Mid-Infrared Laser Applications

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Synthesis and growth of GaSe single crystals

Cited by 12 publications

References 14 publications

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for GaxSey Materials

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for GaxSey Materials

Synthesis, Growth of Crack-Free Large-Size BaGa4Se7 Crystal, and Annealing Studies

Pressure-Assisted Method for the Preparations of High-Quality AaGaS2 and AgGaGeS4 Crystals for Mid-Infrared Laser Applications

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Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for Ga_xSe_y Materials

Synthesis, Structure and Application of Intramolecularly‐Coordinated Gallium Chalcogenides: Suitable Single‐Source precursors for Ga_xSe_y Materials

Synthesis, Growth of Crack-Free Large-Size BaGa₄Se₇ Crystal, and Annealing Studies

Pressure-Assisted Method for the Preparations of High-Quality AaGaS₂ and AgGaGeS₄ Crystals for Mid-Infrared Laser Applications