2023
DOI: 10.1039/d2nr05244j
|View full text |Cite
|
Sign up to set email alerts
|

Synthesis and high-temperature ferromagnetism of Fe-doped SiGe diluted magnetic semiconductor thin films

Abstract: Fe-doped SiGe (Si0.25Ge0.75:Fex, x = 0.01, 0.025, and 0.05) thin films are prepared by radio frequency magnetron sputtering and subsequent rapid thermal annealing on Ge (100) substrate and their structural,...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(3 citation statements)
references
References 49 publications
2
1
0
Order By: Relevance
“…In the Raman spectrum shown in Figure 1 b–f, we successfully observed three main vibrational modes, located near 81 cm −1 (A g3 mode), 150 cm −1 (B 3g mode), and 188 cm −1 (A g1 mode). These results are highly consistent with previous research reports on the Raman peak positions of GeSe [ 25 , 26 , 27 ], thereby confirming the structure and composition of the synthesized GeSe nanowires.…”
Section: Resultssupporting
confidence: 92%
See 1 more Smart Citation
“…In the Raman spectrum shown in Figure 1 b–f, we successfully observed three main vibrational modes, located near 81 cm −1 (A g3 mode), 150 cm −1 (B 3g mode), and 188 cm −1 (A g1 mode). These results are highly consistent with previous research reports on the Raman peak positions of GeSe [ 25 , 26 , 27 ], thereby confirming the structure and composition of the synthesized GeSe nanowires.…”
Section: Resultssupporting
confidence: 92%
“…In the Raman spectrum shown in Figure 1b-f, we successfully observed three main vibrational modes, located near 81 cm −1 (Ag3 mode), 150 cm −1 (B3g mode), and 188 cm −1 (Ag1 mode). These results are highly consistent with previous research reports on the Raman peak positions of GeSe [25][26][27], thereby confirming the structure and composition of the synthesized GeSe nanowires. 2a), the grown GeSe nanowires exhibit relatively sparse distribution, accompanied by uneven nanowire shapes, with some portions even revealing the underlying ceramic substrate.…”
Section: Structural Characterizationsupporting
confidence: 92%
“…Semiconductor (SC) spintronics based on the ferromagnetic SCs and ferromagnet (FM)/SC heterojunctions , have attracted considerable attention for next-generation, multifunctional spintronic device integration. The unique carrier-mediated magnetization property of ferromagnetic SCs has enabled efficient magnetization manipulation via electrical or optical carrier injection. ,, Previous studies have noted the influence of SCs on the coercive field of FMs in the FM/SC heterojunctions .…”
Section: Introductionmentioning
confidence: 99%