Synthesis and high temperature transport properties of barium and indium double-filled skutterudites BaxInyCo4Sb12−z

Zhao, Wenyu; Dong, Chunlei; Wei, Ping; Guan, Weibao; Liu, Lisheng; Zhai, Pengcheng; Tang, Xinfeng; Zhang, Q. J.

doi:10.1063/1.2821364

Cited by 77 publications

(57 citation statements)

References 32 publications

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“…The preparation process of xBaM/Ba0.3In0.3Co4Sb12 magnetic nanocomposite TE materials was given as follows: Firstly, highly pure metals Co, Sb, Ba and In were used to prepare Ba0.3In0.3Co4Sb12 matrix, and the detailed process was reported in elsewhere 44 . Secondly, micron-sized BaM powders had been ball-milled for 24 h and deposited in water to obtain BaM-NPs by discarding the coarse particles.…”

Section: Methodsmentioning

confidence: 99%

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

et al. 2016

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How to suppress the performance deterioration of thermoelectric materials in the intrinsic excitation region remains a key challenge. The magnetic transition of permanent magnet nanoparticles from ferromagnetism to paramagnetism provides an effective approach for the solution of this challenge. Here we have designed and prepared the magnetic nanocomposite thermoelectric materials consisting of BaFe 12 O 19 nanoparticles (BaM-NPs) and Ba 0.3 In 0.3 Co 4 Sb 12 matrix. It is discovered that the electrical transport behaviors of the nanocomposites have been controlled by the magnetic transition of BaM-NPs from ferromagnetism to paramagnetism. BaM-NPs trap the elctrons below the Curie temperature (T C ) and release the trapped electrons above the T C , playing an "electron repository" role in maintaining high ZT. BaM-NPs produce two types of magnetoelectric effects of electron spiral motion and magnon-drag thermopower besides enhancing phonon scattering. Our work demonstrates that the thermoelectric performance deterioration in the intrinsic excitation region can be suppressed through the magnetic transition of permanent magnet nanoparticles.Thermoelectric (TE) materials have attracted much interest owing to the fascinating applications in recycling utilization of industrial waste heat and automobile exhaust heat, high-efficiency cooling of next-generation integrated circuits, and full-spectrum solar power generation 1,2 . The properties of TE materials are characterized by dimensionless figure of merit ZT=α 2 σT/(κ E +κ L ). Where T, α, σ, κ E and κ L are the absolute temperature, Seebeck coefficient, electrical conductivity, and the electronic and lattice components of the thermal conductivity (κ), respectively. To optimize the thermal properties, various phonon engineering approaches were used to enhance phonon scattering and decrease κ L by having taken advantage of nanoinclusion [3][4][5][6][7][8][9][10][11][12][13] . A series of band structure engineering approaches were employed to improve the electrical properties [14][15][16][17][18][19][20] . Recently, we discovered that the electrical and thermal properties of TE materials could be simultaneously optimized through coexisting multi-localization transport behavior 21 . However, TE materials have been facing a serious problem that the intrinsic excitation unavoidably results in the deterioration of high-temperature performance. Up to now, it remains a key challenge how to suppress the performance deterioration of TE materials in the intrinsic excitation region.Based on the Maxwell's electromagnetic theory, the charged particles (electrons and holes) are confined to circular paths or helixes and even trapped by magnetic impurities owing to the Lorentz force (F L ) 22 . To achieve excellent electrical transport properties, all semiconductor materials including various TE materials had been generally required to eliminate the magnetic impurities in the past decades. This understanding has limited the development of magnetic nanocomposite TE materials. Here we pr...

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Section: Methodsmentioning

confidence: 99%

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

et al. 2016

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“…The calculated results are in good agreement with the experimental data. 1,7,9,16 The results show that the Seebeck coefficients of CoSb 3 singlefilled with Sn, Tl, and In are À247 lV K À1 , À232 lV K À1 , and À231 lV K À1 , respectively, at 300 K, and show an increase compared with that of CoSb 3 of À224 lV K À1 . There are two important reasons for this: The first is the interaction of Sn, Tl, and In with the host atoms, and the second is the modest electron concentration after Sn, Tl, and In have been inserted into the voids, as compared with that due to the lanthanoid atoms.…”

Section: Electronic Structures Of R 0125 Co 4 Sb 12mentioning

confidence: 79%

“…The basic analytical model was a 2 9 2 9 2 primitive cell of CoSb 3 , which has 128 atoms and 8 voids. By filling the void at the (0, 0, 0) point with an R atom (R = Ba, Ca, La, Nd, Eu, Yb, In, Tl, and Sn, chosen based on reported literature 6,9,[16][17][18], we obtain the computational model of R 0.125 Co 4 Sb 12 , a single-filled CoSb 3 .…”

Section: Computational Detailsmentioning

confidence: 99%

Electronic Structures and Transport Properties of Single-Filled CoSb3

Zhou

Liu

Zhai

et al. 2010

Journal of Elec Materi

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Band structure and density of states (DOS) of CoSb 3 single-filled by seven kinds of atoms (R 0.125 Co 4 Sb 12 ) are calculated by the density functional method. The results for the electronic structures in turn determine the electrical transport and thermal performance. It is found that the band structure of R 0.125 Co 4 Sb 12 shows no significant changes compared with that of CoSb 3 , and the results indicate that void filling with a small quantity of R atoms does not change the bond formation in CoSb 3 . However, the partial DOS reveals that there could be interaction of Sn, Tl, In, and Yb atoms with CoSb 3 . The results for the electrical transport properties and thermal properties show that Sn, Tl, and In atoms increase the Seebeck coefficient and La, Eu, and Yb atoms are helpful for increasing the electron concentration and decreasing the thermal conductivity further. According to our calculations and Yang's principle, double-filled CoSb 3 with atomic combinations of (In, Ca), (In, Ba), (Sn, Eu), and (Sn, La) may exhibit good thermoelectric performance.

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“…13,14 These excellent TE properties were supposed to be due to orbital hybridizations induced by the In filler. 14 Ba and In double-filled skutterudite-based TE devices with high efficiency are now being considered for use in a new thermoelectric-photovoltaic hybrid solar power generation system in order to realize full-wavelength solar energy conversion into electricity through both photovoltaics (200 nm to 800 nm) and thermoelectrics (800 nm to 3000 nm), which was developed by the cooperation between Zhang et al from China and Niino et al from Japan.…”

Section: Introductionmentioning

confidence: 98%

Thermal Stability of Barium and Indium Double-Filled Skutterudite Ba0.3In0.2Co3.95Ni0.05Sb12 Coated by SiO2 Nanoparticles

Wei

Zhao

Dong

et al. 2010

Journal of Elec Materi

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Filled skutterudite thermoelectric (TE) materials have been extensively studied to search for better TE materials in the past decade. However, there is no detailed investigation about the thermal stability of filled skutterudite TE materials. The evolution of microstructure and TE properties of nanostructured skutterudite materials fabricated with Ba 0.3 In 0.2 Co 3.95 Ni 0.05 Sb 12 /SiO 2 core-shell composite particles with 3 nm thickness shell was investigated during periodic thermal cycling from room temperature to 723 K in this work. Scanning electronic microscopy and electron probe microscopy analysis were used to investigate the microstructure and chemical composition of the nanostructured skutterudite materials. TE properties of the nanostructured skutterudite materials were measured after every 200 cycles of quenching in the temperature range from 300 K to 800 K. The results show that the microstructure and composition of Ba 0.3 In 0.2 Co 3.95 Ni 0.05 Sb 12 /SiO 2 nanostructured skutterudite materials were more stable than those of single-phase Ba 0.3 In 0.2 Co 3.95 Ni 0.05 Sb 12 bulk materials. The evolution of TE properties indicates that the electrical and thermal conductivity decrease along with an increase in the Seebeck coefficient with increasing quenching up to 2000 cycles. As a result, the dimensionless TE figure of merit (ZT) of the nanostructured skutterudite materials remains almost constant. It can be concluded that these nanostructured skutterudite materials have good thermal stability and are suitable for use in solar power generation systems.

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Synthesis and high temperature transport properties of barium and indium double-filled skutterudites BaxInyCo4Sb12−z

Cited by 77 publications

References 32 publications

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

Magnetoelectric interaction and transport behaviours in magnetic nanocomposite thermoelectric materials

Electronic Structures and Transport Properties of Single-Filled CoSb3

Thermal Stability of Barium and Indium Double-Filled Skutterudite Ba0.3In0.2Co3.95Ni0.05Sb12 Coated by SiO2 Nanoparticles

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