2008
DOI: 10.1007/s11671-008-9205-6
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Synthesis and Luminescence Properties of Core/Shell ZnS:Mn/ZnO Nanoparticles

Abstract: In this paper the influence of ZnO shell thickness on the luminescence properties of Mn-doped ZnS nanoparticles is studied. Transmission electron microscopy (TEM) images showed that the average diameter of ZnS:Mn nanoparticles is around 14 nm. The formation of ZnO shells on the surface of ZnS:Mn nanoparticles was confirmed by X-ray diffraction (XRD) patterns, high-resolution TEM (HRTEM) images, and X-ray photoelectron spectroscopy (XPS) measurements. A strong increase followed by a gradual decline was observed… Show more

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Cited by 82 publications
(34 citation statements)
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“…Similar blue-shift in the highest intensity PL peak has been reported for other core-shell nanoparticles such as ZnS:Mn/ZnO, HgTe/CdTe core-shell nanoparticles. 24,[26][27][28] An intensity ratio 'I' defined as the ratio of the intensity of the peak attributed to the bandedge emission to the intensity of the peak attributed to O-vacancies is quite important. While 'I' corresponds to a value of 0.35 for SnO 2 nanoparticles, a value of 0.2 is observed for SnO nanoparticles.…”
Section: Analysis Of Pl Propertiesmentioning
confidence: 99%
“…Similar blue-shift in the highest intensity PL peak has been reported for other core-shell nanoparticles such as ZnS:Mn/ZnO, HgTe/CdTe core-shell nanoparticles. 24,[26][27][28] An intensity ratio 'I' defined as the ratio of the intensity of the peak attributed to the bandedge emission to the intensity of the peak attributed to O-vacancies is quite important. While 'I' corresponds to a value of 0.35 for SnO 2 nanoparticles, a value of 0.2 is observed for SnO nanoparticles.…”
Section: Analysis Of Pl Propertiesmentioning
confidence: 99%
“…ZnO thin film is an n-type semiconductor with an optical gap of about 3.3 eV, and it exhibits a high transmittance in the visible region of the radiation spectra [5][6][7]. Moreover, ZnO thin films used in transparent conductive contacts, solar cells, laser diodes, ultraviolet lasers, thin film transistors, optoelectronic and piezoelectric applications to surface acoustic wave devices [8,9]. Recently, ternary Zn 1Àx Mg x O (ZMO) with wider band gap than ZnO (E g ¼ 3.37 eV) has received much attention due to its potential applications in ultraviolet optoelectronic devices [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…Most of the work in this direction has been done on ZnO core/ZnS shell and in one dimensional structure [13][14][15][16][17]. Very little work has been done on inverted core/shell structure of ZnS/ZnO which focused on synthesis of ZnS/ZnO micro/nano spheres [18][19][20], quantum dots [21,22] and NPs [23], nanobelt heterostructures [24], nanoribbons [25] and study of their optical properties as well as photoanode in dye sensitized solar cell [26]. To the best of our knowledge, no work has been reported on inverted core/shell dilute magnetic semiconductor structures of doped ZnS/ZnO.…”
Section: Introductionmentioning
confidence: 99%